TGF1350-SCC TriQuint, TGF1350-SCC Datasheet - Page 7

• Manufacturer Part Number: TGF1350-SCC
• Description: RF GaAs DC-18.0GHz 0.3mm MESFET
• Manufacturer: TriQuint

Specifications of TGF1350-SCC

• Drain Source Voltage Vds: 8 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 52.32 mS
• Gate-source Breakdown Voltage: - 6 V
• Power Dissipation: 0.7 W
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004310

Reflow process assembly notes:
Component placement and adhesive attachment assembly notes:
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Interconnect process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C.
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas : [phone]
Assembly Process Notes
Fax: [phone] Web: www.triquint.com
Product Data Sheet
TGF1350-SCC
February 1, 2002
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