TISP4350T3BJR-S Bourns Inc., TISP4350T3BJR-S Datasheet - Page 3

• Manufacturer Part Number: TISP4350T3BJR-S
• Description: Sidacs 275V(DRM)250A(IPP)350V(BO)
• Manufacturer: Bourns Inc.

Specifications of TISP4350T3BJR-S

• Breakover Voltage Vbo: +/- 350 V
• Breakover Current Ibo Max: 30 A
• Rated Repetitive Off-state Voltage Vdrm: 275 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Off-state Capacitance Co: 16 pF, 20 pF, 43 pF, 48 pF, 54 pF
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Minimum Operating Temperature: - 40 C
• Breakover Voltage Range: ± 350V
• Breakover Current Max.: 800A
• Thyristor Case: SMB
• No. Of Pins: 2
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
DECEMBER 2001 - REVISED MAY 2008
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
Recommended Operating Conditions
Electrical Characteristics, T A = 25
Thermal Characteristics
V
dv/dt
R
R
I
I
C
DRM
(BO)
(BO)
V
S
I
I
T
H
D
off
θJA
TISP4xxxT3BJ Overvoltage Protector Series
Repetitive peak off-
state current
AC breakover voltage
AC breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Junction to free air thermal resistance
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 type A surge survival
(T-G or R-G connection)
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 type A surge survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 type B surge survival
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
Series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
Parameter
Parameter
dv/dt = ±250 V/ms, R
dv/dt = ±250 V/ms, R
I
I
V
Linear voltage ramp, Maximum ramp value < 0.85 V
V
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V
f = 1 MHz, V = 1 V rms, V
T
T
D
D
= ±5 A, t
= ±5 A, di/dt = +/-30 mA/ms
= V
= ±50 V
°
DRM
C (Unless Otherwise Noted)
W
d
d
d
d
d
Component
= 100 µs
SOURCE
SOURCE
T
4-layer PCB,
EIA/JESD51-3 PCB,
265 mm x 210 mm populated line card,
A
Test Conditions
D
D
D
D
D
= 25 °C
= 0,
= -1 V
= -2 V
= -50 V
= -100 V
= 300 Ω
= 300 Ω
, (see Note 5)
I
Test Conditions
T
= I
TSM(1000)
DRM
,
T
A
= 25 °C
T
T
T
A
A
A
’4290T3
’4350T3
’4400T3
= 25 °C
= 85 °C
= 85 °C
±150
Min
Min
Min
2.5
±5
0
0
5
0
6
Typ
Typ
Typ
54
48
43
20
16
52
Max
±800
Max
Max
±290
±350
±400
±10
±10
±5
±3
65
58
52
19
115
24
kV/µs
°C/W
Unit
Unit
Unit
µA
µ
pF
Ω
V
A
V
A
A