TISP8201MDR-S Bourns Inc., TISP8201MDR-S Datasheet - Page 10

• Manufacturer Part Number: TISP8201MDR-S
• Description: Sidacs PROTECTOR - BUFFERED N-GATE PROG. PROT.
• Manufacturer: Bourns Inc.

Specifications of TISP8201MDR-S

• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 9 shows typical overshoots on a 100 A 2/10 waveshape. Both devices are under 10 V peak, which meets the needs of the SLICs listed
earlier.
Figure 10 shows a typical circuit for single line protection using one TISP8200M and one TISP8201M. The series resistor values limit the test
impulse currents to within the protector ratings.
MAY 1998 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP8200M and TISP8201M Voltage Overshoot
Line Protection with TISP8200M and TISP8201M
TISP8200M & TISP8201M
-10
-20
20
10
0
0
(I
V
K
GA
) I
100 200 300 400 500 600 700 800 900 1000
= -80 V
T
TISP8200M 2/10 OVERSHOOT
= -100 A
GR-1089-CORE
R1 = 15 Ω Ω Ω Ω min. (1
ITU-T K.20 & K.21
R1 = 10 Ω Ω Ω Ω min for coordination
AI8XAE
RING
TIP
Time - ns
Figure 10. Line Protection with TISP8200M and TISP8201M
Figure 9. Voltage Overshoot Referenced to Gate Bias Voltage
R1
R1
st
& 2
nd
level)
AI8XAMA
8201M
TISP
-10
-20
20
10
0
0
0 V
100 nF
(I
V
8200M
A
GK
TISP8201M 2/10 OVERSHOOT
C2
TISP
) I
T
= +80 V
V
100
= +100 A
BATH
V
BATR
100 nF
C1
200
Time - ns
SLIC
300
0 V
400
AI8XANA
500