25TTS12FPPBF Vishay, 25TTS12FPPBF Datasheet - Page 5

• Manufacturer Part Number: 25TTS12FPPBF
• Description: SCRs 1200 Volt 25 Amp
• Manufacturer: Vishay

Specifications of 25TTS12FPPBF

• Breakover Current Ibo Max: 350 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.25 V @ 16 A
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 45 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 45mA
• Current It Av: 16A
• On State Rms Current It(rms): 25A
• Peak Non Rep Surge Current Itsm 50hz: 300A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 94384
0.01
100
0.1
0.1
10
10
0.0001
0.001
1
1
a)Recommended load line for
b)Recommended load line for
Rectangular gate pulse
VGD
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated d i/ dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
IGD
0.001
0.01
1000
Fig. 8 - Thermal Impedance Z
100
10
Fig. 7 - On-state Voltage Drop Characteristics
S ingle Pulse
1
0
Instantaneous On-state Voltage (V)
S quare Wave Pulse Duration (s)
Fig. 9 - Gate Characteristics
Insta ntaneous Ga te Current (A)
1
25T T S .. S eries
0.01
0.1
(b )
2
T = 25°C
T = 125°C
(a )
J
J
25T T S .. S eries
3
thJC
25TTS12FPPbF SAFE
0.1
1
Frequenc y Limited b y PG(AV)
Characteristics
4
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
25T T S .. S eries
S teady S tate Value
(DC Operation)
(4)
5
10
1
(3)
Bulletin I2200 rev. A 09/05
(2)
(1)
100
10
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IR
Series
5