2N5060 Central Semiconductor, 2N5060 Datasheet - Page 7

• Manufacturer Part Number: 2N5060
• Description: SCRs 0.8A 30V
• Manufacturer: Central Semiconductor

Specifications of 2N5060

• Breakover Current Ibo Max: 10 A
• Rated Repetitive Off-state Voltage Vdrm: 30 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 1.2 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.35 mA
• Holding Current (ih Max): 10 mA
• Mounting Style: Through Hole
• Package / Case: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SEATING
PLANE
R
X X
1
A
V
H
N
G
N
P
L
C
K
B
SECTION X−X
PACKAGE DIMENSIONS
D
http://onsemi.com
2N5060 Series
CASE 29−11
TO−226AA
J
ISSUE AL
TO−92
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
Y14.5M, 1982.
IS UNCONTROLLED.
BEYOND DIMENSION K MINIMUM.
STYLE 10:
DIM
A
B
C
D
G
H
K
N
P
R
V
J
L
PIN 1. CATHODE
2. GATE
3. ANODE
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.115
0.135
MIN
−−−
INCHES
0.205
0.210
0.165
0.021
0.055
0.105
0.020
0.105
0.100
MAX
−−−
−−−
−−−
−−−
0.407
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
1.15
2.42
0.39
6.35
2.04
2.93
3.43
−−−
MAX
0.533
5.20
5.33
4.19
1.39
2.66
0.50
2.66
2.54
−−−
−−−
−−−
−−−