40TPS12APBF Vishay, 40TPS12APBF Datasheet - Page 2

• Manufacturer Part Number: 40TPS12APBF
• Description: SCRs 1200 Volt 35 Amp
• Manufacturer: Vishay

Specifications of 40TPS12APBF

• Breakover Current Ibo Max: 600 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.85 V @ 110 A
• Gate Trigger Voltage (vgt): 2.5 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 40 mA
• Holding Current (ih Max): 150 mA
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Peak Repetitive Off-state Voltage, Vdrm: 1.2kV
• Gate Trigger Current Max, Igt: 40mA
• Current It Av: 35A
• On State Rms Current It(rms): 55A
• Peak Non Rep Surge Current Itsm 50hz: 500A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage 40TPS08
Maximum rate of rise of off-state voltage 40TPS12
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate current to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
Phase Control SCR, 35 A
SYMBOL
SYMBOL
I
RRM/
V
V
I
P
- V
T(RMS)
dV/dt
I
dI/dt
P
I
T(TO)1
T(TO)2
V
V
T(AV)
V
I
I
TSM
G(AV)
I
I
I
2
r
r
GM
GD
I
I
GT
2
TM
GM
GD
t1
t2
H
GT
√t
L
GM
I
t
DRM
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
T
110 A, T
T
T
T
T
T
T
T
T
T
T
T
T
C
J
J
J
J
J
J
J
J
J
J
J
J
J
= 125 °C
= - 40 °C
= - 40 °C
= 125 °C
= 25 °C
= 25 °C
= T
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C, for 40TPS08APbF and 40TPS12APbF
= 125 °C, V
= 79 °C, 180° conduction half sine wave
J
maximum, linear to 80 % V
J
= 25 °C
DRM
TEST CONDITIONS
TEST CONDITIONS
= Rated value
V
R
= Rated V
RRM
RRM
Anode supply = 6 V
resistive load
applied
applied
RRM
DRM
/V
, R
DRM
Initial T
T
g
J
-k = Open
maximum
J
Document Number: 94388
=
Revision: 12-Sep-08
VALUES
VALUES
12 500
1250
1760
1000
1.02
1.23
9.74
7.50
1.85
0.25
500
600
100
150
300
500
270
150
0.5
2.5
2.5
4.0
2.5
1.7
40
35
55
10
10
10
80
6
UNITS
UNITS
A
A/µs
V/µs
A
mΩ
mA
mA
mA
W
2
A
V
V
A
V
V
V
2
√s
s