MBR40060CTR GeneSiC Semiconductor, MBR40060CTR Datasheet

Schottky (Diodes & Rectifiers) 60V 400A Schottky Recovery

MBR40060CTR

Manufacturer Part Number

MBR40060CTR

Description

Schottky (Diodes & Rectifiers) 60V 400A Schottky Recovery

Manufacturer

GeneSiC Semiconductor

Datasheet

1.MBR40045CT.pdf (2 pages)

Specifications of MBR40060CTR

Product

Schottky Diodes

Peak Reverse Voltage

60 V

Forward Continuous Current

400 A

Max Surge Current

3000 A

Forward Voltage Drop

0.8 V

Maximum Reverse Leakage Current

1 uA

Operating Temperature Range

- 40 C to + 175 C

Mounting Style

SMD/SMT

Package / Case

Module

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBR40060CTR

Manufacturer:

GeneSiC Semiconductor

Quantity:

135

Company:

Meier Automation Equipment Co., Limited

Part Number:

MBR40060CTR

Manufacturer:

GENESIC

Quantity:

20 000

Current page: 1 of 2
Download datasheet (519Kb)

www.genesicsemi.com

• High Surge Capability

• Types up to 100 V V

Repetitive peak reverse

voltage

RMS reverse voltage

DC blocking voltage

Continuous forward

current

Surge non-repetitive

forward current, Half

Sine Wave

Operating temperature

Storage temperature

Parameter

Diode forward voltage

Reverse current

Thermal resistance,

junction - case

Features

Maximum ratings, at T

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Thermal characteristics

Silicon Power

Schottky Diode

Parameter

RRM

Symbol

= 25 °C, unless otherwise specified ("R" devices have leads reversed)

F,SM

RRM

RMS

thJC

stg

= 25 °C, t

= 200 A, T

= 20 V, T

Conditions

≤ 125 °C

= 125 °C

= 8.3 ms

= 25 °C

MBR40045CT (R) MBR40060CT (R)

-40 to 175

3000

0.65

0.35

400

200

MBR40045CT thru MBR400100CTR

-40 to 175

3000

0.35

400

200

0.8

MBR40080CT (R)

Twin Tower Package

-40 to 175

3000

0.84

0.35

400

200

RRM

= 400 A

= 20 V - 100 V

MBR400100CT (R)

-40 to 175

3000

0.84

0.35

100

400

200

°C/W

Unit

°C

Related parts for MBR40060CTR

MBR40060CTR Summary of contents

Page 1

Silicon Power Schottky Diode Features • High Surge Capability • Types up to 100 V V RRM Maximum ratings °C, unless otherwise specified ("R" devices have leads reversed) j Parameter Symbol Repetitive peak reverse V V ...

Page 2

MBR40045CT thru MBR400100CTR 2 ...

Related keywords

MBR40060CTR datasheet
MBR40060CTR data sheet
MBR40060CTR pdf datasheet
MBR40060CTR component
MBR40060CTR part
MBR40060CTR distributor
MBR40060CTR RoHS
MBR40060CTR datasheet download