1SS387TH3FT Toshiba, 1SS387TH3FT Datasheet

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1SS387TH3FT

Manufacturer Part Number
1SS387TH3FT
Description
Rectifiers Ultra Hi Speed 80V 100mA
Manufacturer
Toshiba
Datasheet
1.1SS387CTTPL3.pdf (4 pages)

Specifications of 1SS387TH3FT

Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
85 V
Forward Voltage Drop
1.2 V
Recovery Time
4 ns
Forward Continuous Current
100 mA
Max Surge Current
1 A
Reverse Current Ir
0.5 uA
Mounting Style
SMD/SMT
Package / Case
ESC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Ultra High Speed Switching Applications
Maximum Ratings
Electrical Characteristics
Compact 2-pin package – ideal for high-density mounting
Low forward voltage
Fast reverse recovery time : t
Small total capacitance
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
pad dimension of 4 × 4mm.
Characteristic
Characteristic
(Ta = 25°C)
: V
: C
rr
TOSHIBA Diode Silicon Epitaxial Planar Type
F (3)
T
= 1.6ns (typ.)
= 0.5pF (typ.)
(Ta = 25°C)
= 0.98V (typ.)
Symbol
Symbol
V
V
V
I
I
V
I
T
R (1)
R (2)
FSM
I
V
F (1)
F (2)
F (3)
C
FM
I
t
T
RM
P
stg
O
rr
R
T
j
1SS387
Circuit
Test
―
―
―
―
―
―
―
−55∼125
Rating
150 *
200
100
125
85
80
1
1
I
I
I
V
V
V
I
F
F
F
F
R
R
R
= 1mA
= 10mA
= 100mA
= 10mA, Fig.1
= 30V
= 80V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
V
V
A
z
JEDEC
JEITA
TOSHIBA
Weight: 1.4mg(typ)
Min
―
―
―
―
―
―
―
Typ.
0.62
0.75
0.98
0.5
1.6
―
―
1-1G1A
―
―
2005-01-08
Max
1.20
0.1
0.5
3.0
4.0
―
―
1SS387
Unit: mm
Unit
µA
pF
ns
V

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1SS387TH3FT Summary of contents

Page 1

... TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications Compact 2-pin package – ideal for high-density mounting Low forward voltage : V = 0.98V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.5pF (typ.) T Maximum Ratings (Ta = 25°C) Characteristic ...

Page 2

Fig.1 Reverse Recovery Time Test Circuit ( 1SS387 Pin Assignment (Top View) Marking 2005-01-08 ...

Page 3

3 1SS387 2005-01-08 ...

Page 4

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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