1SS352(TH3,F,T) Toshiba, 1SS352(TH3,F,T) Datasheet

1SS352(TH3,F,T)

Manufacturer Part Number

1SS352(TH3,F,T)

Description

Rectifiers Vr=80V If=0.1A 2Pin

Manufacturer

Toshiba

Datasheet

1.1SS352TH3FT.pdf (3 pages)

Specifications of 1SS352(TH3,F,T)

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

85 V

Forward Voltage Drop

1.2 V

Recovery Time

4 ns

Forward Continuous Current

0.1 A

Max Surge Current

1 A

Reverse Current Ir

0.5 uA @ 80 V

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 125 C

Minimum Operating Temperature

- 55 C

Package / Case

USC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

1SS352(TH3,F,T)

Quantity:

121

Current page: 1 of 3
Download datasheet (208Kb)

Ultra High Speed Switching Application

Absolute Maximum Ratings

Electrical Characteristics

Small package

Low forward voltage

Fast reverse recovery time : t

Small total capacitance

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

Junction temperature

Storage temperature

Note: Using continuously under heavy loads (e.g. the application of high

Forward voltage

Reverse current

Total capacitance

Reverse recovery time

(*) Mounted on a glass epoxy circuit board of 20 × 20mm,

pad dimension of 4 × 4mm.

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

: V

: C

TOSHIBA Diode Silicon Epitaxial Planar Type

F (3)

= 1.6ns (typ.)

= 0.5pF (typ.)

(Ta = 25°C)

= 0.98V (typ.)

(Ta = 25°C)

Symbol

R (1)

R (2)

FSM

F (1)

F (2)

F (3)

stg

1SS352

Circuit

Test

―

−55~125

200 (*)

Rating

200

100

125

= 1mA

= 10mA

= 100mA

= 10mA, Fig.1

= 30V

= 80V

= 0, f = 1MH

Test Condition

Unit

°C

JEDEC

JEITA

TOSHIBA

Weight: 0.004g (typ.)

Min

―

Typ.

0.62

0.75

0.98

0.5

1.6

―

1-1E1A

―

2007-11-01

1.20

Max

0.1

0.5

3.0

4.0

―

1SS352

Unit: mm

Unit

μA

Related parts for 1SS352(TH3,F,T)

1SS352(TH3,F,T) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (*) Mounted on a glass epoxy circuit board of 20 × ...

Page 2

Fig.1 Reverse Recovery Time Test Circuit ( 1SS352 Pin Assignment Marking (Top View) 2007-11-01 ...

Page 3

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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