VS-8E2TL06FP-E Vishay, VS-8E2TL06FP-E Datasheet - Page 5

• Manufacturer Part Number: VS-8E2TL06FP-E
• Description: Rectifiers 8A 600V Hyperfast Vf 1V TO-220FPAC
• Manufacturer: Vishay

Specifications of VS-8E2TL06FP-E

• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1 V
• Recovery Time: 255 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 125 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Package / Case: TO-220 Fullpak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93168
Revision: 19-Aug-10
93168_09
400
350
300
250
200
150
100
50
0
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
I
F
= 8 A, T
J
dI
= 25 °C
F
[e-mail], [e-mail],
/dt (A/μs)
I
F
For technical questions within your region, please contact one of the following:
= 8 A, T
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
VS-8E2TL06-E, VS-8E2TL06-M, VS-8E2TL06FP-E
J
- peak reverse recovery current
= 125 °C
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
RRM
Ultralow V
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
8 A FRED Pt
L = 70 μH
G
F
Ultrafast Rectifier,
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
93168_10
S
(4) Q
(5) dI
IRFP250
and I
current during t
®
rr
(rec)M
0.75 I
- area under curve defined by t
3.0
2.5
2.0
1.5
1.0
RRM
t
D.U.T.
/dt - peak rate of change of
b
100
RRM
[e-mail]
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
rr
Q
=
RRM
I
b
rr
F
/dt
portion of t
t
= 8 A, T
I
(4)
rr
F
x I
= 8 A, T
(5)
2
RRM
Vishay Semiconductors
J
dI
= 125 °C
J
rr
F
= 25 °C
/dt (A/μs)
rr
www.vishay.com
F
/dt
1000
5