CMPD2005S Central Semiconductor, CMPD2005S Datasheet

Diodes (General Purpose, Power, Switching) Dual In Series

CMPD2005S

Manufacturer Part Number

CMPD2005S

Description

Diodes (General Purpose, Power, Switching) Dual In Series

Manufacturer

Central Semiconductor

Datasheet

1.CMPD2005S.pdf (2 pages)

Specifications of CMPD2005S

Product

Switching Diodes

Peak Reverse Voltage

350 V

Forward Continuous Current

225 mA

Max Surge Current

4 A

Configuration

Dual Series

Recovery Time

50 ns

Forward Voltage Drop

1.25 V

Maximum Reverse Leakage Current

100 nA

Maximum Power Dissipation

0.35 W

Operating Temperature Range

- 65 C to + 150 C

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Mounting Style

SMD/SMT

Package / Case

SOT-23

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

CMPD2005SG TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CMPD2005S TR

Manufacturer:

Centrals

Quantity:

38 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

CMPD2005SG TR

Manufacturer:

Centrals

Quantity:

46 000

Current page: 1 of 2
Download datasheet (393Kb)

* Device is Halogen Free by design

MAXIMUM RATINGS: (T A =25 °C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Forward Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS PER DIODE: (T A =25°C unless otherwise noted)

SYMBOL

I R

BV R

V F

C T

t rr

SILICON SWITCHING DIODES

SURFACE MOUNT

DUAL, IN SERIES

HIGH VOLTAGE

TEST CONDITIONS

V R =280V

V R =280V, T A =150°C

I R =100μA

I F =20mA

I F =100mA

I F =200mA

V R =0, f=1.0MHz

I R =I F =30mA, Rec. to 3.0mA, R L =100Ω

SOT-23 CASE

CMPD2005S

CMPD2005SG*

SYMBOL

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD2005S

and CMPD2005SG each contain two (2) High Voltage

Silicon Switching Diodes, manufactured by the epitaxial

planar process, epoxy molded in a SOT-23 surface

mount package, designed for applications requiring

high voltage capability.

MARKING CODES:

CMPD2005S:

CMPD2005SG*: 5SG

T J , T stg

V RRM

I FRM

I FSM

Θ JA

MIN

350

V R

P D

I O

I F

DB5

-65 to +150

MAX

0.87

1.25

300

350

200

225

625

350

357

100

4.0

1.0

5.0

w w w. c e n t r a l s e m i . c o m

R3 (25-January 2010)

UNITS

°C/W

°C

μA

Related parts for CMPD2005S

CMPD2005S Summary of contents

Page 1

... =30mA, Rec. to 3.0mA =100Ω DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S and CMPD2005SG each contain two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODES: ...

Page 2

... CMPD2005S CMPD2005SG* SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODES: CMPD2005S: DB5 CMPD2005SG*: 5SG * Device is Halogen Free by design (25-January 2010) ...

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