MCL4448-TR Vishay, MCL4448-TR Datasheet - Page 2

Diodes (General Purpose, Power, Switching) 100 Volt 100mA 2.0 Amp IFSM

MCL4448-TR

Manufacturer Part Number
MCL4448-TR
Description
Diodes (General Purpose, Power, Switching) 100 Volt 100mA 2.0 Amp IFSM
Manufacturer
Vishay
Datasheet

Specifications of MCL4448-TR

Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.15 A
Max Surge Current
2 A
Configuration
Single
Recovery Time
8 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Package / Case
MicroMELF-2
Diode Type
Small Signal
Forward Current If(av)
150mA
Repetitive Reverse Voltage Vrrm Max
100V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
8ns
Forward Surge Current Ifsm Max
2A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCL4448-TR
Quantity:
70 000
MCL4154
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Junction to ambient air
Junction temperature
Storage temperature range
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
amb
amb
amb
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9154
0.01
100
0.1
10
Parameter
Parameter
1
0
Scattering Limit
T
40
j
- Junction Temperature (°C)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
80
For technical questions within your region, please contact one of the following:
I
V
R
Mounted on epoxy-glass hard
R
35 µm copper clad, 0.9 mm
120
= 5 µA, t
I
copper area per electrode
= 0, f = 1 MHz, V
F
i
R
V
= I
I
R
F
= 0.1 x I
V
= 10 mA, V
R
R
= 25 V, T
Test condition
Test condition
= 25 V
tissue, Fig. 4,
= 10 mA, i
160
I
p
V
F
/T = 0.01, t
R
= 30 mA
= 25 V
R
, R
200
j
L
= 150 °C
R
R
= 100 Ω
HF
= 6 V,
= 1 mA
p
= 0.3 ms
= 50 mV
2
Symbol
V
C
V
I
I
(BR)
t
t
R
R
rr
rr
F
D
Symbol
R
T
thJA
T
94 9152
stg
j
1000
Figure 2. Forward Current vs. Forward Voltage
100
0.1
10
1
DiodesEurope@vishay.com
0
Min.
35
T = 100 °C
0.4
j
V - Forward Voltage (V)
F
- 65 to + 175
Value
0.8
Typ.
500
175
T = 25 °C
j
1.2
Document Number 85568
Max.
1000
100
100
4
4
2
1.6
Rev. 1.9, 20-Aug-10
2.0
K/W
Unit
°C
°C
Unit
mV
nA
µA
pF
ns
ns
V

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