AH322-S8PCB900 TriQuint, AH322-S8PCB900 Datasheet

RF Modules & Development Tools 400-2700MHz Eval Board

AH322-S8PCB900

Manufacturer Part Number

AH322-S8PCB900

Description

RF Modules & Development Tools 400-2700MHz Eval Board

Manufacturer

TriQuint

Datasheet

1.AH322-S8PCB2140.pdf (8 pages)

Specifications of AH322-S8PCB900

Board Size

6.2 mm x 5 mm x 1.62 mm

Minimum Frequency

400 MHz

Minimum Operating Temperature

- 40 C

Supply Voltage (min)

5 V

Product

RF Modules

Maximum Frequency

2.7 GHz

Output Power

2 W

Supply Voltage (max)

8 V

Supply Current

1400 mA

Maximum Operating Temperature

+ 85 C

For Use With/related Products

AH322

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

1071300

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TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com

AH322

2W High Linearity InGaP HBT Amplifier

Product Features

•

Applications

•

Specifications

1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940

3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%

4. This corresponds to the quiescent current or operating current under small-signal conditions into

Absolute Maximum Rating

Operation of this device above any of these parameters may cause permanent damage.

Parameter

Operational Bandwidth

Test Frequency

Gain

Input R.L.

Output R.L.

Output P1dB

Output IP3

WCDMA Channel Power

Noise Figure

Vcc, Vbias

Quiescent Collector Current

Iref

Parameter

Storage Temperature

RF Input Power, CW, 50 , T = 25ºC

Device Voltage, Vcc, Vbias

Device Current

Device Power

Thermal Resistance, Rth

Junction Temperature, Tj

@ -50 dBc ACLR

400 – 2700 MHz

+33 dBm P1dB

+50 dBm Output IP3

13.4 dB Gain @ 2140 MHz

500 mA Quiescent Current

+5 V Single Supply

MTTF > 100 Years

Lead-free/RoHS-compliant

SOIC-8 Package

Final stage amplifiers for Repeaters

High Power Amplifiers

Mobile Infrastructure

LTE / WCDMA / EDGE / CDMA

MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,

1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to

calculate the OIP3 using a 2:1 rule.

Probability.

pins 6 and 7.

(2)

(1)

(4)

(3)

Units Min

MHz

dBm

The AH322 is a high dynamic range driver amplifier in a

low-cost surface mount package. The InGaP/GaAs HBT is

able to achieve high performance for various narrowband-

tuned application circuits with up to +50 OIP3 and +33

dBm of compressed 1dB power. It is housed in a lead-

free/RoHS-compliant SOIC-8 package. All devices are 100%

RF and DC tested.

The AH322 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. The AH322 is ideal for the final stage of

small repeaters or as driver stages for high power

amplifiers. In addition, the amplifier can be used for a wide

variety of other applications within the 400 to 2700 MHz

frequency band.

Rating

-65 to +150 °C

Input P

+8 V

1400 mA

8 W

18.6 °C / W

+200 °C

400

+24.1

Typ

2140

13.4

14.7

+33

+50

500

7.8

4.8

Product Description

Max

2700

Typical Performance

Ordering Information

Standard T/R size = 1000 pieces on a 7” reel.

Part No.

AH322-S8G

AH322-S8PCB900

AH322-S8PCB1960

AH322-S8PCB2140

Parameter

Frequency

Gain

Input Return Loss

Output Return Loss

WCDMA Channel Power

@ -50 dBc ACLR

Output P1dB

Output IP3

Noise Figure

Vcc, Vbias

Iref

Quiescent Collector Current

(2)

Description

2W High Linearity InGaP HBT Amplifier

(lead-free/RoHS-compliant SOIC-8 Pkg)

920 - 960 MHz Evaluation Board

1930 - 1990 MHz Evaluation Board

2110 - 2170 MHz Evaluation Board

(3)

Functional Diagram

Units

Output / Vcc

MHz

dBm

Function

Vbias

Input

GND

Iref

+23.6

+33.0

+47.6

19.4

940

600

8.5

Backside Paddle

Typical

+24.4

+33.3

+50.2

1960

14.1

11.3

11.8

500

Pin No.

4.5

2, 4, 5

6, 7

April 2009

+24.1

2140

13.4

14.7

+33

+50

500

7.8

4.8

Related parts for AH322-S8PCB900

AH322-S8PCB900 Summary of contents

Page 1

... Iref +5 Quiescent Collector Current 500 30 Rating Ordering Information -65 to +150 °C Input P dB Part No AH322-S8G 1400 AH322-S8PCB900 18.6 ° AH322-S8PCB1960 +200 °C AH322-S8PCB2140 Standard T/R size = 1000 pieces on a 7” reel. Functional Diagram Function Pin No. Iref Input Output / Vcc 6, 7 Vbias ...

Page 2

... AH322 2W High Linearity InGaP HBT Amplifier S-Parameters (Vcc = + Gain and Maximum Stable Gain 45 40 DB(MSG()) DB(|S(2,1)|) De_emebedded S_parameter De_emebedded S_parameter 2.14 GHz 15 7. 0.5 1 1.5 2 Frequency (GHz) Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a particular frequency expected that actual gain will be higher the maximum stable gain ...

Page 3

... The edge placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz). 6. The edge placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz). 7. The edge placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz not exceed +5.5V supply or TVS diode D3 will be damaged. ...

Page 4

... AH322 2W High Linearity InGaP HBT Amplifier 920 - 960 MHz Application Circuit (AH322-S8PCB900) Typical RF Performance at 25 ° ° ° ° C Frequency (MHz) units 920 Gain dB 19.2 Input Return Loss dB 16.6 Output Return Loss dB 7.8 Output P1dB dBm +33 (1) Channel Power dBm +24.3 ...

Page 5

... AH322 2W High Linearity InGaP HBT Amplifier Performance Plots for AH322-S8PCB900 contd. OIP3 vs. Channel Power Freq. = 940, 941 MHz, 1MHz spacing 25C -40C 85C Output Power / Tone (dBm) TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com OIP3 vs ...

Page 6

... OIP3 is measured at 24 dBm / tone output power with 1 MHz spacing. 3. The multilayer inductor L3 (82nH) is critical for linearity performance. 4. Vpd is used as device power down voltage (low = RF off). 5. The edge placed at 247 mils from the edge of AH322 RFout pin (11 º @ 1960 MHz not exceed +5.5V supply or TVS diode D3 will be damaged jumpers may be replaced with copper traces in the target application layout ...

Page 7

... Vpd is used as device power down voltage (low = RF off). 5. The edge placed at 195 mils from the edge of AH322 RFout pin (22 º @ 2140 MHz). 6. The edge placed at 0.5 mils from the edge of AH322 RFout pin (0 º @ 2140 MHz). 7. Zero ohm jumpers may be replaced with copper traces in the target application layout. ...

Page 8

... TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com Mechanical Information Product Marking The component will be marked with an “AH322G” designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” ...

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