TLP421(GR,J) Toshiba, TLP421(GR,J) Datasheet - Page 2

• Manufacturer Part Number: TLP421(GR,J)
• Description: Transistor Output Optocouplers PHOTO-TRANS W/IR 80V 5000 Vrms
• Manufacturer: Toshiba

Specifications of TLP421(GR,J)

• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 100 % to 300 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: DIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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•
Current Transfer Ratio
Option(D4)type
TÜV approved: DIN EN 60747-5-2
(Note): When a EN 60747-5-2 approved type is needed,
Making the VDE application: DIN EN 60747-5-2
Construction mechanical rating
TLP421
Type
Maximum operating insulation voltage: 890V
Maximum permissible overvoltage: 8000V
Creepage distance
Clearance
Insulation thickness
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
please designate the “Option(D4)”
TLP421 (GB): TLP421
Approved no. R9950202
Rank GR
Rank GB
Rank BL
Classi−
Rank Y
fication
(None)
(*1)
7.62mm Pitch
Typical Type
7.0mm(min)
7.0mm(min)
0.4mm(min)
I
F
Current Transfer Ratio (%)
= 5mA, V
Min
100
200
100
50
50
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
CE
(I
C
PK
= 5V, Ta = 25°C
/ I
F
)
PK
Max
600
150
300
600
600
2
Blank, Y, Y+, G, G+, B, B+, GB
Y, Y+
G, G+
B, B+
G, G+, B, B+, GB
Marking Of Classification
2007-10-01
TLP421