TLP281-4(GB-TP,J,F Toshiba, TLP281-4(GB-TP,J,F Datasheet - Page 3

• Manufacturer Part Number: TLP281-4(GB-TP,J,F
• Description: Transistor Output Optocouplers 80Vceo 2500Vrms 4 channels
• Manufacturer: Toshiba

Specifications of TLP281-4(GB-TP,J,F

• Maximum Fall Time: 3 us
• Maximum Input Diode Current: 50 mA
• Maximum Reverse Diode Voltage: 5 V
• Maximum Rise Time: 2 us
• Output Device: Transistor
• Output Type: Open Collector
• Configuration: 4 Channel
• Maximum Collector Emitter Voltage: 80 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 2500 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 170 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: SOP-16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Individual Electrical Characteristics
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
(Note 2) Because of the construction,leak current might be increased by ambient light.
Forward Current
Forward Current Derating
Pulse Forward Current
Reverse Voltage
Junction Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
(1 Circuit)
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature
Forward Voltage
Reverse Current
Capacitance
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance
(Collector to Emitter)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
CHARACTERISTIC
together.
Please use photocoupler with less ambient light.
CHARACTERISTIC
(Note1)
(Note2)
(Ta = 25℃)
SYMBOL
∆P
∆P
∆I
V
V
T
BV
T
T
F
I
V
P
CEO
ECO
P
C
V
V
I
T
I
FP
T
T
opr
stg
SYMBOL
sol
C
F
R
C
T
/°C
(BR) CEO
(BR) ECO
j
j
/°C
/°C
S
I
C
CEO
V
C
I
CE
R
F
T
(Ta = 25℃)
−0.7 (Ta≥53°C)
I
V
V = 0, f = 1 MHz
I
I
V
Ambient Light Below
V
Ambient Light Below
V = 0, f = 1 MHz
F
C
E
TLP281
(100 ℓx)
(100 ℓx)
2500(AC,1min,R.H.≤60%)
R
CE
CE
= 10 mA
−1.5
−2.0
= 0.1 mA
= 0.5 mA
150
200
= 5 V
3
= 48 V,
= 48 V, Ta = 85°C
TEST CONDITION
260 (10s)
−55~100
−55~125
RATING
125
125
50
80
50
1
5
7
−0.5 (Ta≥25°C)
TLP281−4
−1.0
−1.7
100
170
mW /°C
mW /°C
mA /°C
UNIT
Vrms
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
V
MIN.
1.0
80
—
—
—
—
—
TLP281,TLP281-4
7
TYP.
1.15
0.01
(2)
(4)
30
10
—
—
—
2
2007-10-01
MAX.
(10)
(50)
1.3
0.1
10
50
—
—
—
—
UNIT
μA
μA
μA
pF
pF
V
V
V