TCDT1110 Vishay, TCDT1110 Datasheet - Page 3

• Manufacturer Part Number: TCDT1110
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 100%
• Manufacturer: Vishay

Specifications of TCDT1110

• Isolation Voltage: 3750 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 50mA
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
Input
Output
Coupler
Insulation Rated Parameters
Document Number 83531
Rev. 1.7, 26-Oct-04
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Insulation resistance
C
/I
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
I
V
f = 1 MHz
V
100 %, t
t
(see figure 2)
V
V
V
(construction test only)
F
Tr
CE
CE
IO
IO
IO
= 10 mA, I
= 60 s, t
= 500 V
= 500 V, T
= 500 V, T
= 5 V, I
= 20 V, I
test
Test condition
Test condition
Test condition
Test condition
Test condition
Test condition
test
F
= 1 s
C
F
= 10 mA, R
= 10 s,
amb
amb
= 0.5 mA
= 10 mA
= 100 °C
= 200 °C
L
= 1 Ω
Symbol
Symbol
Symbol
Symbol
Symbol
Symbol
V
V
V
P
CTR
CEsat
V
V
R
R
R
IOTM
IOTM
C
T
TCDT1110/ TCDT1110G
f
I
diss
F
pd
pd
c
IO
IO
IO
si
k
10
10
Min
Min
100
Min
Min
Min
Min
10
1.6
1.3
6
12
11
9
Vishay Semiconductors
Typ.
110
Typ.
Typ.
Typ.
Typ.
Typ.
0.3
Max
Max
Max
Max
Max
Max
130
265
150
0.3
6
www.vishay.com
Unit
kHz
Unit
Unit
Unit
mW
Unit
Unit
mA
pF
kV
kV
kV
kV
°C
%
Ω
Ω
Ω
V
3