TLP620-2GBFT Toshiba, TLP620-2GBFT Datasheet - Page 2

• Manufacturer Part Number: TLP620-2GBFT
• Description: Transistor Output Optocouplers TR 2 CH AC CTR=100% MIN
• Manufacturer: Toshiba

Specifications of TLP620-2GBFT

• Forward Current: 10 mA
• Maximum Input Diode Current: 10 mA
• Output Device: Transistor
• Output Type: Open Collector
• Configuration: 2 Channel
• Maximum Collector Emitter Voltage: 55 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 100 % to 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

•
•
•
Absolute Maximum Ratings
Isolation voltage: 5000V
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit)
Isolation voltage
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
UL recognized
BSI approved
Forward current
Forward current derating
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C)
Junction temperature
(Note) When an EN 60747-5-2 approved type is needed,
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
Maximum operating insulation voltage: 890V
Highest permissible over voltage: 8000V
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
please designate the “Option(D4)”.
Characteristic
E67349
7426, 7427
rms
Made In Japan
(min.)
(Ta = 25°C)
ΔP
ΔP
ΔP
I
ΔI
Symbol
F (RMS)
V
V
T
T
BV
T
F
I
P
P
D
CEO
ECO
C
P
sold
T
I
FP
T
T
opr
stg
C
/ °C
D
C
T
/ °C
j
/ °C
j
/ °C
S
*1
*2
PK
E152349
7426, 7427
PK
Made In Thailand
2
−0.7 (Ta ≥ 39°C)
TLP620
−1.0
−1.5
−2.5
100
150
250
60
5000 (AC, 1 min., RH ≤ 60%)
1 (100μs pulse, 100pps)
TLP620,TLP620−2,TLP620−4
*1
*2
260 (10s)
−55~125
−55~100
Rating
125
125
55
50
7
−0.5 (Ta ≥ 25°C)
TLP620−2
TLP620−4
−0.7
−1.0
−1.5
100
150
50
70
2007-10-01
mW / °C
mW / °C
mW / °C
mA / °C
V
Unit
mW
mW
mW
mA
mA
°C
°C
°C
°C
°C
A
V
V
rms