TCDT1122G Vishay, TCDT1122G Datasheet - Page 3

Transistor Output Optocouplers Phototransistor Out Single CTR > 63-125%

TCDT1122G

Manufacturer Part Number
TCDT1122G
Description
Transistor Output Optocouplers Phototransistor Out Single CTR > 63-125%
Manufacturer
Vishay
Datasheets

Specifications of TCDT1122G

Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
90 V
Maximum Collector Emitter Saturation Voltage
300 mV
Isolation Voltage
5300 Vrms
Current Transfer Ratio
125 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
No. Of Channels
1
Optocoupler Output Type
Phototransistor
Input Current
50mA
Output Voltage
70V
Opto Case Style
DIP
No. Of Pins
6
Approval Bodies
UL
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCDT1122G
Quantity:
5 510
Part Number:
TCDT1122G
Manufacturer:
OMRON
Quantity:
5 510
Part Number:
TCDT1122G
Manufacturer:
N/A
Quantity:
20 000
Output
Coupler
Current Transfer Ratio
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
Input
Output
Document Number 83532
Rev. 1.6, 26-Oct-04
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector-emitter cut-off current
Collector emitter saturation
voltage
Cut-off frequency
Coupling capacitance
I
Forward current
Power dissipation
C
/I
F
Parameter
Parameter
Parameter
Parameter
Parameter
I
I
I
V
I
V
R
f = 1 MHz
V
V
C
C
E
F
CE
CE
CE
CE
L
= 100 µA
= 10 mA, I
= 100 µA
= 1 mA
= 100 Ω
= 20 V, I
= 5 V, I
= 5 V, I
= 5 V, I
Test condition
Test condition
Test condition
Test condition
Test condition
F
F
F
C
f
= 10 mA,
= 1 mA
= 10 mA
= 0
= 1 mA
TCDT1120G
TCDT1122G
TCDT1123G
TCDT1124G
TCDT1120G
TCDT1122G
TCDT1123G
TCDT1124G
Symbol
Symbol
Symbol
Symbol
V
TCDT1120
TCDT1122
TCDT1123
TCDT1124
TCDT1120
TCDT1122
TCDT1123
TCDT1124
V
V
V
P
I
CEsat
CEO
CBO
CEO
ECO
C
TCDT1120/ TCDT1120G
f
I
diss
F
c
Part
k
Min
Min
Min
Min
90
90
7
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Vishay Semiconductors
Typ.
Typ.
110
Typ.
Typ.
0.3
Min
100
160
10
15
30
60
40
63
Typ.
Max
Max
Max
Max
150
130
265
0.3
www.vishay.com
Max
125
200
320
Unit
Unit
kHz
Unit
Unit
mW
mA
nA
pF
V
V
V
V
Unit
%
%
%
%
%
%
%
%
3

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