TLP127TPRUF Toshiba, TLP127TPRUF Datasheet

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TLP127TPRUF

Manufacturer Part Number
TLP127TPRUF
Description
Transistor Output Optocouplers 300Vceo 2500Vrms
Manufacturer
Toshiba
Datasheet

Specifications of TLP127TPRUF

Maximum Fall Time
15 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Maximum Rise Time
40 us
Output Device
Darlington
Output Type
Darlington
Maximum Collector Emitter Voltage
300 V
Maximum Collector Emitter Saturation Voltage
1 V
Isolation Voltage
2500 Vrms
Current Transfer Ratio
4000 %
Maximum Forward Diode Voltage
1.3 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
MFSOP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Programmable Controllers
DC−Output Module
Telecommunication
The TOSHIBA mini flat coupler TLP127 is a small outline coupler,
suitable for surface mount assembly.
TLP127 consists of a gallium arsenide infrared emitting diode, optically
coupled to a darlington photo transistor with an integral base−emitter
resistor, and provides 300V V
Pin Configurations
Collector−emitter voltage: 300 V (min.)
Current transfer ratio: 1000% (min.)
Isolation voltage: 2500Vrms (min.)
UL recognized: UL1577, file no. E67349
BSI approved: BS EN60065:2002, certificate no.8927
1
3
1 : ANODE
3 : CATHODE
4 : EMITTER
6 : COLLECTOR
BS EN60950-1:2002, certificate no.8928
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
(top view)
4
6
CEO
.
TLP127
1
Weight: 0.09 g (typ.)
TOSHIBA
11−4C1
2007-10-01
TLP127
Unit in mm

Related parts for TLP127TPRUF

TLP127TPRUF Summary of contents

Page 1

... TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Programmable Controllers DC−Output Module Telecommunication The TOSHIBA mini flat coupler TLP127 is a small outline coupler, suitable for surface mount assembly. TLP127 consists of a gallium arsenide infrared emitting diode, optically coupled to a darlington photo transistor with an integral base−emitter resistor, and provides 300V V ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Individual Electrical Characteristics Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector dark current Capacitance collector to emitter Coupled Electrical Characteristics Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Isolation Characteristics Characteristic Capacitance (input to ...

Page 4

Switching Characteristics Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Note: Recommended operating conditions are given as a design guideline to ...

Page 5

I – 100 − Ambient temperature Ta (°C) I – 3000 Pulse width ≤ 100μ 25°C 1000 500 300 100 ...

Page 6

I – 160 Ta = 25°C 10mA 120 0.8 1.2 1.6 0.4 Collector–emitter voltage V CE Switching Time – 1000 Ta = 25°C V 500 300 16mA) ...

Page 7

I – Ta CEO − 200V 150V 80V − − − Ambient temperature Ta (℃) 120 100 ...

Page 8

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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