CNY17-3. Vishay, CNY17-3. Datasheet - Page 2

• Manufacturer Part Number: CNY17-3.
• Description: Transistor Output Optocouplers NPN Phototransistor
• Manufacturer: Vishay

Specifications of CNY17-3.

• Forward Current: 60 mA
• Maximum Fall Time: 14 us
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Maximum Rise Time: 3 us
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 200%
• Maximum Forward Diode Voltage: 1.65 V
• Minimum Forward Diode Voltage: 1.25 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83606
Rev. 1.6, 10-Dec-05
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
For technical questions, contact: [e-mail]
V
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CB
EB
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
V
I
I
F
R
V
CE
= 60 mA
= 10 mA
R
Output, with Base Connection
max. 10 s, dip soldering: distance to
Optocoupler, Phototransistor
= 10 V
= 6 V
C
V
V
= 2.5 mA
IO
seating plane ≥ 1.5 mm
IO
= 500 V, T
TEST CONDITION
= 500 V, T
t < 1.0 ms
t = 1 s
CNY17-1
CNY17-2
CNY17-3
CNY17-4
amb
PART
amb
= 100 °C
= 25 °C
SYMBOL
V
I
I
I
I
V
C
C
C
CEsat
C
R
R
C
CEO
CEO
CEO
CEO
V
I
BR
R
CE
CB
EB
th
th
F
O
C
SYMBOL
BV
BV
P
T
V
MIN.
T
T
R
R
I
I
amb
diss
ISO
stg
CEO
EBO
C
C
sld
6
IO
IO
Vishay Semiconductors
TYP.
1.25
0.01
0.25
750
500
- 55 to + 150
- 55 to + 100
5.2
6.5
7.5
0.6
25
2
2
5
5
VALUE
≥ 10
≥ 10
5300
≥ 0.4
100
150
175
260
≥ 7
≥ 7
70
50
7
12
11
MAX.
1.65
100
100
0.4
10
50
50
www.vishay.com
CNY17
UNIT
V
mW
mm
mm
mm
mA
mA
°C
°C
°C
RMS
V
V
Ω
Ω
UNIT
K/W
K/W
µA
nA
nA
nA
nA
pF
pF
pF
pF
pF
V
V
V
215