SIM-012SBT97 Rohm Semiconductor, SIM-012SBT97 Datasheet - Page 2

• Manufacturer Part Number: SIM-012SBT97
• Description: Photodiodes SMD IR EMITTER SIDE VIEW
• Manufacturer: Rohm Semiconductor
• Type: Chip Sensorr

Specifications of SIM-012SBT97

• Peak Wavelength: 950 nm
• Half Intensity Angle Degrees: 12 deg
• Maximum Reverse Voltage: 5 V
• Maximum Power Dissipation: 60 mW
• Maximum Light Current: 40 mA
• Maximum Dark Current: 10 uA
• Maximum Rise Time: 1 us
• Maximum Fall Time: 1 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 30 C
• Mounting Style: SMD/SMT
• Product: Ambient Light Sensor
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Sensors
Electrical and optical characteristics (Ta=25°C)
Electrical and optical characteristic curves
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
1000
100
50
40
30
20
10
10
0
−50
−20
Fig.4 Relative emitting strength
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current faloff
AMBIENT TEMPERATURE : Ta (°C)
−25
0
vs.ambient temperature
Parameter
0
20
25
40
50
60
75
80
100
100
Symbol
θ
tr·tf
P
∆λ
V
λ
I
1 / 2
f
I
100
E
R
C
O
P
F
50
40
30
20
10
80
60
40
20
0
0
900
0
Fig.2 Forward current vs.
OPTICAL WAVELENGTH : λ (nm)
Min.
0.9
FORWARD VOLTAGE : V
920
−
−
−
−
−
−
−
−
Fig.5 Wavelength
forward voltage
940
Typ.
950
±12
3.5
1.2
1.0
1.0
40
−
−
1
960
Max.
7.1
1.5
10
−
−
−
−
−
−
F
980
−25 °C
(V)
25 °C
50 °C
75 °C
0 °C
mW/sr
MHz
Unit
mW
deg
nm
nm
µA
µs
V
1000
2
I
I
I
V
I
I
I
I
I
F
F
F
F
F
F
F
F
=20mA
=20mA
=20mA
R
=20mA
=20mA
=20mA
=20mA
=20mA
=3V
6
4
8
2
0
0
FORWARD CURRENT : I
Fig.3 Emitting strength vs.
10
Conditions
forward current
Rev.A
SIM-012SB
20
F
30
(mA)
2/3
40