BPW 34 FASR-Z OSRAM Opto Semiconductors Inc, BPW 34 FASR-Z Datasheet - Page 4

• Manufacturer Part Number: BPW 34 FASR-Z
• Description: Photodiodes PHOTODIODE, SMT RG
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34 FASR-Z

• Photodiode Material: Silicon
• Peak Wavelength: 880 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 2 nA
• Maximum Rise Time: 0.02 us
• Maximum Fall Time: 0.02 us
• Package / Case: DIL
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.65A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 50uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2699

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-03-30
R
rel
rel
S
=
Ι
rel
R
=
4000
3000
2000
1000
=
100
100
f
50
60
70
80
90
pA
80
70
60
50
40
30
20
10
f
%
0
f
(
0
400
V
0
(λ)
(ϕ)
R
),
1.0
40
E
600
5
= 0
0.8
800
10
30
0.6
1000 nm 1200
15
20
OHF01430
OHF00080
V
λ
0.4
V
R
20
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
20
Ι
C
=
P
10
100
10
μ
10
10
10
f
pF
80
70
60
50
40
30
20
10
A
-1
0
10
10
3
2
1
0
(
V
40
-2
0
R
),
f
10
10
60
= 1 MHz,
1
-1
I
BPW 34 FA, BPW 34 FAS, BPW 34 FASR
P
80
10
10
=
4
V
Ι
2
0
P
O
f
(
100
E
E
μ
e
W/cm
10
OHF01402
V
),
= 0
1
O
V
OHF01428
E
OHF00081
V
120
2
=
e
V
R
R
f
= 5 V
10
10
(
10
10
10
10
10
E
mV
4
2
4
3
2
1
0
e
)
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
Ι
P
R
tot
=
10
10
10
10
10
f
mW
nA
160
140
120
100
80
60
40
20
-1
(
f
3
2
1
0
0
T
0
0
(
A
T
),
A
)
V
20
20
R
= 10 V,
40
40
60
60
E
= 0
80 ˚C 100
80 ˚C 100
OHF00082
T
OHF00958
T
A
A