VBPW34SR Vishay, VBPW34SR Datasheet - Page 2

• Manufacturer Part Number: VBPW34SR
• Description: Photodiodes 60V 215mW 65Deg
• Manufacturer: Vishay
• Type: PIN Photodioder

Specifications of VBPW34SR

• Lens Type: Transparent
• Photodiode Material: Silicon
• Peak Wavelength: 940 nm
• Half Intensity Angle Degrees: 65 deg
• Maximum Reverse Voltage: 60 V
• Maximum Power Dissipation: 215 mW
• Maximum Light Current: 55 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 100 ns
• Maximum Fall Time: 100 ns
• Wavelength Typ: 940nm
• Half Angle: 65°
• Dark Current: 2nA
• Diode Case Style: SMD
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +100°C
• Msl: MSL 3 - 168 Hours
• Reverse Voltage Vr: 60V
• Breakdown Voltage Vbr: 60V
• Reverse Voltage Vr Max: 60V
• Rohs Compliant: Yes
• Forward Voltage Vf Max: 1.3V
• Featured Product: VBPW34x / VBP104x Series High-Speed PIN Photodiodes
• Wavelength: 940nm
• Output Type: Current On Typ, 55µA
• Package / Case: 2-SMD, Z-Bend
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

VBPW34S, VBPW34SR
Vishay Semiconductors
BASIC CHARACTERISTICS (T
www.vishay.com
2
BASIC CHARACTERISTICS (T
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
k
o
60
For technical questions, contact:
V
R
= 10 V
E
E
E
E
E
amb
80
V
V
e
e
e
e
e
amb
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
V
V
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
R
R
I
= 25 °C, unless otherwise specified)
R
V
= 10 V, λ = 950 nm
= 10 V, R
= 10 V, R
= 25 °C, unless otherwise specified)
= 100 µA, E = 0
R
λ = 820 nm
λ = 820 nm
I
= 10 V, E = 0
F
V
Silicon PIN Photodiode
100
= 50 mA
R
= 5 V
2
2
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
L
L
= 1 kΩ,
= 1 kΩ,
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Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
NEP
TK
λ
C
C
V
V
(BR)
I
I
λ
I
ϕ
0.1
t
t
ro
ra
k
r
D
D
p
f
F
o
Vo
Ik
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
45
T
20
amb
- Ambient Temperature (°C)
430 to 1100
4 x 10
λ = 950 nm
V
40
TYP.
- 2.6
± 65
350
940
100
100
0.1
R
70
25
50
55
1
2
= 5 V
-14
60
Document Number: 81128
MAX.
1.3
30
40
80
Rev. 1.1, 20-Apr-10
100
W/√Hz
mV/K
UNIT
%/K
deg
mV
nm
nm
nA
µA
µA
pF
pF
ns
ns
V
V