RPM-075PTT86 Rohm Semiconductor, RPM-075PTT86 Datasheet

Photodetector Transistors PHOTO LINK MODULE

RPM-075PTT86

Manufacturer Part Number
RPM-075PTT86
Description
Photodetector Transistors PHOTO LINK MODULE
Manufacturer
Rohm Semiconductor
Type
Chipr
Datasheet

Specifications of RPM-075PTT86

Maximum Power Dissipation
50 mW
Maximum Dark Current
500 nA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
SMD
Voltage - Collector Emitter Breakdown (max)
20V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
500nA
Wavelength
600nm
Viewing Angle
120°
Power - Max
50mW
Mounting Type
Surface Mount
Orientation
Top View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RPM-075PTT86
Manufacturer:
ROHM
Quantity:
4 000
Part Number:
RPM-075PTT86
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Sensors
Phototransistor, surface mount type
RPM-075PT
Quite new phototransistor which peak sensitivity is designed as same level as human eye. Best sensor to detect
illuminance. (Peak sensitivity is 600nm.) Small and light weight package which can be used for reflow soldering and Pd
free soldering.
! ! ! ! Application
Control of lighting cellular phones, LCD displays, etc.
Control of strobe. (DSC, camcorder, etc.)
! ! ! ! Features
1) Best sensor to detect illuminance.
2) Small (2125) and light weight package (3mg) which
3) Linear against wide range of illuminance from a few
4) Use Si good for an environ ment. (not CdS)
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Electrical and optical characteristics (Ta=25°C)
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
(Peak sensitivity is 600nm.)
can be used for reflow soldering and Pd free
soldering.
Lx to 10000Lx over.
Parameter
Parameter
Symbol
V
V
Topr
Tstg
Symbol
P
V
CEO
ECO
I
C
C
I
CE (sat)
θ
tr·tf
CEO
λ
I
1/2
C
P
0.25
Min.
−40∼+100
−30∼+85
Limits
20
10
50
5
Typ.
600
±60
0.4
10
Max.
0.6
0.5
0.4
! ! ! ! External dimensions (Units : mm)
Unit
mW
mA
˚C
˚C
V
V
Unit
deg
mA
nm
µA
µs
V
V
V
I
V
C
CE
CC
CE
= 0.1mA, E = 500Lx
= 5V, E = 500Lx
= 5V, I
= 10V (Black box)
2
(0.15)
C
= 1mA, R
Conditions
2.0
1.2
1.4
+0.2
−0
L
Emitter mark
= 100Ω
1
RPM-075PT
Emitter
Unspecified tolerance
shall be ±0.1
1
Collector
2
1/2

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RPM-075PTT86 Summary of contents

Page 1

... CEO λ − − 600 nm P − − (sat) θ − − ±60 deg 1/2 − − µs tr·tf 10 RPM-075PT Unspecified tolerance shall be ±0.1 (0.15) Emitter mark 1.4 +0.2 2.0 −0 1 Emitter Collector Conditions = 5V 500Lx 10V (Black box − = 0.1mA 500Lx ...

Page 2

... OPTICAL WAVELENGTH : λ (nm) Fig.7 Spectral sensitivity characteristics 100 −90 −60 −30 100 ANGULAR DISPLACEMENT : θ (deg) Fig.8 Directional pattern RPM-075PT 1000 100 10 1 −50 − (V) AMBIENT TEMPERATURE : Ta CE Fig.3 Relative output-Ambient temperature 120 100 − AMBIENT TEMPERATURE : Ta Fig ...

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