BPV11 Vishay, BPV11 Datasheet - Page 5

• Manufacturer Part Number: BPV11
• Description: Photodetector Transistors NPN Phototransistor 80V 150mW 450-1080nm
• Manufacturer: Vishay
• Type: Chipr

Specifications of BPV11

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 850nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 10mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Transistor Case Style: T-1 3/4
• Current Ic Typ: 10mA
• Fall Time Tf: 3.8µs
• Half Angle: 15°
• Rohs Compliant: Yes
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 850nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Svhc: No SVHC (20-Jun-2011)
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Water Clear
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11
Vishay Semiconductors
Package Dimensions in mm
9612200
Document Number 81504
www.vishay.com
Rev. 1.4, 08-Mar-05
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