BPV11F Vishay, BPV11F Datasheet
BPV11F
Specifications of BPV11F
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BPV11F Summary of contents
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... BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. PRODUCT SUMMARY ...
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... V CEsat 100 Ω mA 100 Ω mA off = 100 Ω mA 100 80 94 8239 Fig Relative Collector Current vs. Ambient Temperature BPV11F Vishay Semiconductors MIN. TYP. MAX 450 ± 15 930 900 to 980 130 300 6 5 110 2 mW/cm e λ = 950 nm 1.4 1.2 1.0 0.8 ...
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... BPV11F Vishay Semiconductors 100 λ = 950 nm 0.1 0.01 0.01 0 Irradiance (mW/cm²) 94 8244 e Fig Collector Light Current vs. Irradiance 100 λ = 950 mW/ 0.5 mW/ 0.2 mW/cm 0.1 mW/ 0.05 mW/cm 0.02 mW/cm 2 0.1 0 Collector Emitter Voltage (V) 94 8245 CE Fig Collector Light Current vs. Collector Emitter Voltage ...
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... Fig Relative Radiant Sensitivity vs. Angular Displacement 0.2 0.8 - 0.1 Chip position ± 0. 0.2 0.8 - 0.1 + 0.2 0.5 - 0.1 2.54 nom. BPV11F Vishay Semiconductors 0° 10° 20° 1.0 0.9 0.8 0.7 0.4 0.2 0.6 0 Area not plane + 0.15 0.5 technical drawings 1 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...