SFH 309 P OSRAM Opto Semiconductors Inc, SFH 309 P Datasheet - Page 6

• Manufacturer Part Number: SFH 309 P
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 309 P

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 1 nA
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 150 mV
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: T-1
• Voltage - Collector Emitter Breakdown (max): 35V
• Current - Collector (ic) (max): 15mA
• Current - Dark (id) (max): 200nA
• Wavelength: 860nm
• Viewing Angle: 150°
• Power - Max: 165mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0245

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
2007-04-02
T
300
250
200
150
100
50
C
0
0
235 C
100
C
... 260
... 130
C
C
ca 200 K/s
1. Welle
1. wave
50
Emitter
2 K/s
1.8 (0.071)
1.2 (0.047)
29 (1.142)
27 (1.063)
10 s
Zwangskühlung
forced cooling
5 K/s
Area not flat
100
Chip position
3.5 (0.138)
3.1 (0.122)
2.5 (0.098)
2.0 (0.079)
1.7 (0.067)
4.5 (0.177)
4.1 (0.161)
2. Welle
2. wave
6
(nach CECC 00802)
(acc. to CECC 00802)
2 K/s
150
SFH 309 P, SFH 309 PFA
0.6 (0.024)
0.4 (0.016)
4.0 (0.157)
3.6 (0.142)
GEOY6446
t
Normalkurve
standard curve
Grenzkurven
limit curves
200
s
OHLY0598
250