BPX 38-2/3 OSRAM Opto Semiconductors Inc, BPX 38-2/3 Datasheet - Page 12

• Manufacturer Part Number: BPX 38-2/3
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 38-2/3

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 100nA
• Wavelength: 880nm
• Viewing Angle: 80°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3578

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
118
Multi TOPLED
Multi TOPLED
Phototransistors
Detector/Emitter in Multi TOPLED package
Package
Package
Infrared Components
Silicon Photodetectors
Type
SFH 331-JK
Type
SFH 7221
http://catalog.osram-os.com
http://catalog.osram-os.com
http://catalog.osram-os.com
Emitter
λ
typ
[nm]
635
Detector
Radiant sensi-
tive area typ.
[mm
0.038
Emitter
λ
typ
[nm]
880
Detector
Radiant sensi-
tive area typ.
[mm
0.038
peak
peak
2
2
]
]
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
Half angle
ϕ
[°]
± 60
I
[μA]
≥ 16
PCE
PCE
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
I
[mcd]
6 (4 ... 12.5)
Measurement
cond.
λ = 950 nm, E
= 0.1 mW/cm
V
I
[mW/sr]
≥ 4
Measurement
cond.
λ = 880 nm, E
= 0.1 mW/cm
V
V
e
CE
CE
= 5 V
= 5 V
2
2
e
e
,
,
Measurement
cond.
I
V
max.
[V]
35
Measurement
cond.
I
= 20 ms
V
max.
[V]
35
F
F
CE
CE
= 10 mA
= 100 mA, t
p
V
[V]
2 (≤ 2.6)
λ
typ.
[nm]
440 ... 1150
V
[V]
1.5 (≤ 1.8)
λ
typ.
[nm]
440 ... 1150
F
F
10%
10%
Measurement
cond.
I
t
typ
[μs]
7
Measurement
cond.
I
= 20 ms
t
typ
[μs]
7
F
F
r
r
, t
, t
= 100 mA, t
= 10 mA
f
f
p
Ordering Code
Q65110A2821
Ordering Code
Q65110A2741
Technical Data
Package
Fig.
11
Package
Fig.
12