SE5470-004 Honeywell, SE5470-004 Datasheet
SE5470-004
Manufacturer Part Number
SE5470-004
Description
Rocker Switches & Paddle Switches AlGaAs Emiting Diode TO-46 Metal Can Pkg
Manufacturer
Honeywell
Datasheet
1.SE5470-004.pdf
(2 pages)
Specifications of SE5470-004
Bandwidth
80 nm (Spectral)
Current, Forward
100 mA
Package Type
TO-46 Metal Can
Power Dissipation
150 mW
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-55 °C
Time, Fall
0.7 us
Time, Rise
0.7 us
Voltage, Forward
1.9 V
Voltage, Reverse
3 V (Break Down)
Wave Length
880 nm
Temperature Range
–55°C to +125°C
Wavelength
880 nm
Beam Angle
20 deg
Radiant Intensity
3.5 mW
Maximum Forward Current
100 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Package / Case
TO-46
Fall Time
0.7 us
Forward Current
100 mA
Forward Voltage
1.9 V
Lens Shape
Dome
Mounting Style
Through Hole
Rise Time
0.7 us
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SE5470-004
SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package
Representative
photograph, actual
product appearance may
vary.
Due to regional agency
approval requirements,
some products may not be
available in your area.
Please contact your
regional Honeywell office
regarding your product of
choice.
Product Type
Power Output
Beam Angle (Degree)
Package Style
Package Components
Forward Current
Continuous Forward Current
Forward Voltage
Reverse Breakdown Voltage
SE5470-004
SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package
Features
Description
The SE3470/5470 series consists of aluminum gallium arsenide
infrared emitting diode mounted in a TO-46 metal can package. The
SE3470 series has flat window cans providing a wide beam angle,
while the SE5470 series has glass lensed cans providing a narrow
beam angle. These devices typically exhibit 70% greater power
output than gallium arsenide devices at the same forward current.
The TO-46 packages offer high power dissipation capability and are
ideally suited for operation in hostile environments.
TO-46 metal can package
Choice of flat window or lensed package
90 ° or 20 ° (nominal) beam angle option
880 nm wavelength
Higher output power than GaAs at equivalent drive currents
Wide operating temperature range [-55 °C to 125 °C]
Ideal for high pulsed current applications
Mechanically and spectrally matched to SD3421/5421
photodiode, SD3443/5443/5491 phototransistor,
SD3410/5410 photodarlington and SD5600 series Schmitt
trigger
Product Specifications
IR Component
3.5 mW/cm² min
20
T0-46, Dome Lensed
Metal
100 mA
100 mA
1.9 V
3 V
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SE5470-004 Summary of contents
Page 1
... These devices typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments. SE5470-004 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package Product Type Power Output ...
Page 2
... Rise and Fall Time Power Dissipation Operating Temperature Range Availability Product Name SE5470-004 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package SE5470-004 SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package 880 0.2 nm/°C 0.7 µs 150 mW -55 °C to 125 °C [-67 °F to 257 °F] ...