NCN6001DTBR2G ON Semiconductor, NCN6001DTBR2G Datasheet - Page 9
NCN6001DTBR2G
Manufacturer Part Number
NCN6001DTBR2G
Description
IC INTERFACE SMART CARD 20TSSOP
Manufacturer
ON Semiconductor
Datasheet
1.NCN6001DTBR2.pdf
(36 pages)
Specifications of NCN6001DTBR2G
Applications
Smart Card
Interface
Microcontroller
Voltage - Supply
2.75 V ~ 5.5 V
Package / Case
20-TSSOP
Mounting Type
Surface Mount
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NCN6001DTBR2GOS
NCN6001DTBR2GOS
NCN6001DTBR2GOSTR
NCN6001DTBR2GOS
NCN6001DTBR2GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NCN6001DTBR2G
Manufacturer:
ON
Quantity:
2 462
Part Number:
NCN6001DTBR2G
Manufacturer:
ON/安森美
Quantity:
20 000
4. Ceramic X7R, SMD type capacitors are mandatory to achieve the CRD_VCC specifications. When an electrolytic capacitor is used, the
5. Pulsed current, according to ISO7816−3, paragraph 4.3.2.
6. No function externally available during the V
POWER SUPPLY
Input Power Supply
Standby Supply Current Conditions:
DC Operating Current
CLK_IN = Low, All Card Pins Unloaded
V
V
V
Output Card Supply Voltage
Maximum Continuous Output Current
@ CRD_VCC = 1.8 V
@ CRD_VCC = 3.0 V
@ CRD_VCC = 5.0 V
Output Over Current Limit
Output Dynamic Peak Current
Output Card Supply Voltage Ripple
Output Card Supply Turn On Time @
Lout = 22 mF, Cout1 = 10 mF Ceramic
V
Output Card Supply Shut Off Time @
Cout1 = 10 mF, Ceramic
V
CC
CC
CC
CC
CC
external filter must include a 220 nF, max 50 mW ESR capacitor in parallel, to reduce both the high frequency noise and ripple to a minimum.
Depending upon the PCB layout, it might be necessary to use two 4.7 mF/6.0 V/ceramic/X5R/SMD 0805 in parallel, yielding an improved
CRD_VCC ripple over the temperature range.
INT = CLK_IN = CLK_SPI = CS = H
I/O = MOSI = EN_RPU = H, No Card Inserted
V
V
@ CRD_VCC = 1.8 V, 3.0 V or 5.0 V, Cout = 10 mF
(Notes 4 and 5)
@ V
Ceramic X7R, Iout = 55 mA
(Note 4) CRD_VCC = 3.0 V
Under Voltage Detection
Under Voltage Detection
Under Voltage (Note 6)
= 2.7 V, CRD_VCC = 5.0 V
= 2.7 V, CRD_VCC = 5.0 V, VCC
CC
CC
@ V
@ V
@ 2.7 V < V
CC
= 3.3 V, CRD_VCC = 1.8 V, 3.0 V or 5.0 V
= 5.0 V, CRD_VCC = 1.8 V, 3.0 V or 5.0 V
CC
CC
V
V
CRD_VCC = 1.8 V @ Iload = 35 mA
CRD_VCC = 3.0 V @ Iload = 60 mA
CRD_VCC = 5.0 V @ Iload = 65 mA
= 3.6 V, Lout = 22 mH, Cout1 = Cout2 = 4.7 mF
CC
CC
= 3.3 V, CRD_VCC = 5.0 V
= 5.5 V, CRD_VCC = 5.0 V
CRD_VCC = 5.0 V
CRD_VCC = 1.8 V
= 3.0 V
= 5.0 V
CC
@ 2.7 V < V
< 5.5 V
Rating
High
Low
CC
< 5.5 V (−25°C to +85°C ambient temperature, unless otherwise noted).
OFF
< 0.4 V
CC
POR sequence.
http://onsemi.com
Pin
13
13
13
13
13
13
13
9
9
9
9
9
VCC
VCC
VCC
Symbol
VCC
VCC
ICC
ICC
V
V
V
Iccov
V
Iccd
ICC
C2H
C3H
C5H
CC
−
TOFF
POR
TON
sb
op
LH
LL
2.70
2.20
2.00
1.50
1.65
2.75
4.75
Min
100
35
60
65
−
−
−
−
−
−
−
−
−
−
−
1.80
3.00
5.00
Typ
100
150
100
25
35
35
35
35
−
−
−
−
−
−
−
−
−
−
−
−
5.50V
Max
2.70
2.60
2.20
1.95
3.25
5.25
500
250
0.5
1.5
50
60
−
−
−
−
−
−
−
−
−
Unit
mA
mA
mA
mA
mV
mA
ms
ms
V
V
V