PK10X256VMD100 Freescale Semiconductor, PK10X256VMD100 Datasheet - Page 31

• Manufacturer Part Number: PK10X256VMD100
• Description: IC ARM CORTEX MCU 256K 144-MAP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK10X256VMD100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SDHC, SPI, UART/USART
• Peripherals: DMA, I²S, LVD, POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 64K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 37x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LBGA
• Rohs Compliant: Yes
• Processor Series: Kinetis
• Core: ARM Cortex M4
• Data Ram Size: 64 KB
• Interface Type: UART, SPI, I2C, I2S, CAN
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 104
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Freescale Semiconductor, Inc.
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eewr16b128k
eewr16b256k
t
eewr32b128k
eewr32b256k
pgmpart256k
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eewr8b128k
eewr8b256k
eewr16b32k
eewr16b64k
eewr32b32k
eewr32b64k
setram256k
eewr16bers
eewr32bers
Symbol
eewr8b32k
eewr8b64k
setram32k
eewr8bers
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vfykey
ersall
Erase All Blocks execution time
Verify Backdoor Access Key execution time
Program Partition for EEPROM execution time
Set FlexRAM Function execution time:
Byte-write to erased FlexRAM location execution
time
Byte-write to FlexRAM execution time:
Word-write to erased FlexRAM location
execution time
Word-write to FlexRAM execution time:
Longword-write to erased FlexRAM location
execution time
Longword-write to FlexRAM execution time:
Description
• 256 KB FlexNVM
• 32 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Table 19. Flash command timing specifications (continued)
K10 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Longword-write to FlexRAM for EEPROM operation
Word-write to FlexRAM for EEPROM operation
Byte-write to FlexRAM for EEPROM operation
Preliminary
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Peripheral operating requirements and behaviors
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
320
175
100
100
200
—
1600
Max.
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
1.5
2.5
1.5
2.5
2.7
3.7
35
Unit
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
μs
μs
μs
μs
Notes
2
1
3
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