ATTINY261-20MUR Atmel, ATTINY261-20MUR Datasheet - Page 177

IC MCU AVR 2K FLASH 20MHZ 32QFN

ATTINY261-20MUR

Manufacturer Part Number
ATTINY261-20MUR
Description
IC MCU AVR 2K FLASH 20MHZ 32QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY261-20MUR

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VFQFN Exposed Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 18-2. Serial Programming Instruction example
18.7
18.7.1
2588E–AVR–08/10
Byte 1
Parallel Programming
Signal Names
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
177.
This section describes how to parallel program and verify Flash Program memory, EEPROM
Data memory, Memory Lock bits, and Fuse bits. Pulses are assumed to be at least 250 ns in
length, unless otherwise noted.
In this section, some pins are referenced by signal names describing their functionality during
parallel programming, see
are referenced by pin names.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Program Memory/
EEPROM Memory
Figure 18-3
Page Buffer
Page N-1
Page 0
Page 1
Page 2
and
Byte 1
Table
Page Number
18-12. Pins not described in the following table
Bit 15 B
Byte 2
Write Program Memory Page/
Write EEPROM Memory Page
Adr MSB
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 18-2 on page
0
Byte 4
177

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