MRF8P20100HSR3 Freescale Semiconductor, MRF8P20100HSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8P20100HSR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HSR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Functional Tests
Typical Performance
2010--2025 MHz Bandwidth
Typical Broadband Performance — 1880 MHz
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical GSM EDGE Performance
P
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
400 mA, V
out
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
P
P
IMD Symmetry @ 20 W PEP, P
VBW Resonance Point
Gain Flatness in 15 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Part internally matched both on input and output.
2. Measurement made with device in a Symmetrical Doherty configuration.
3. Measurement made with device in quadrature combined configuration.
out
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
= 42 Watts Avg., 1805--1880 MHz EDGE Modulation
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW
GSB
= 1.3 Vdc, P
(1,2)

(In Freescale Doherty Test Fixture, 50 ohm system) V
(2)
30 dBc
(In Freescale Doherty Test Fixture, 50 ohm system) V
Frequency
out
1805 MHz
1840 MHz
1880 MHz
Characteristic
= 20 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
out
Frequency
1880 MHz
1900 MHz
1920 MHz
(3)
where IMD Third Order
(In Freescale Class AB Test Fixture, 50 ohm system) V
(T
out
A
= 25°C unless otherwise noted) (continued)
= 20 W Avg.
(2)
(In Freescale 1880 MHz Doherty Test Fixture, 50 ohm system) V
(dB)
17.1
17.3
17.1
G
ps
DD
Symbol
VBW
IMD
DD
∆P1dB
= 28 Vdc, I
ACPR
P1dB
P3dB
PAR
G
∆G
η
G
= 28 Vdc, I
ps
43.8
42.4
41.7
D
(%)
sym
F
η
res
D
(dB)
16.2
16.1
15.8
G
ps
DQA
DQA
DD
@ 400 kHz
15.0
42.0
Min
7.2
= 400 mA, V
—
—
—
—
—
—
—
—
(dBc)
--58.4
--60.0
--60.5
= 28 Volts, I
SR1
= 400 mA, V
MRF8P20100HR3 MRF8P20100HSR3
43.5
43.4
42.9
(%)
η
D
0.013
0.004
--33.5
16.0
44.3
Typ
126
GSB
7.8
0.1
78
46
53
DQA
GSB
@ 600 kHz
Output PAR
= 1.3 Vdc, P
= I
(dBc)
--74.4
--75.5
--75.3
SR2
= 1.3 Vdc,
DQB
(dB)
DD
7.6
7.6
7.6
--31.0
= 28 Vdc, I
Max
18.0
= 330 mA,
—
—
—
—
—
—
—
—
—
out
= 20 W Avg.,
(% rms)
DQA
EVM
dBm/°C
ACPR
(dBc)
3.0
2.6
2.4
--30.8
--32.6
--34.6
dB/°C
MHz
MHz
Unit
dBc
dB
dB
dB
W
W
%
=
3