BLF7G22LS-200,118 NXP Semiconductors, BLF7G22LS-200,118 Datasheet - Page 6

• Manufacturer Part Number: BLF7G22LS-200,118
• Description: TRANSISTOR PWR LDMOS SOT502
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-200,118

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 29.5A
• Current - Test: 1.62A
• Voltage - Test: 28V
• Power - Output: 30W
• Mounting Style: SMD/SMT
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 29.5 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G22L-200_7G22LS-200
Preliminary data sheet
Fig 7.
Fig 9.
(dB)
(dB)
G
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
p
p
50
40
30
20
10
0
V
Spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on
the CCDF.
Power gain and drain efficiency as functions
of average load power; typical values
0
V
PAR = 8.4 dB at 0.01 % probability on the CCDF.
power; typical values
Drain efficiency as function of average load
DS
DS
= 28 V; I
= 28 V; I
7.5 2-carrier W-CDMA
G
η
D
p
Dq
Dq
40
40
= 1620 mA; f = 2140 MHz; Channel
= 1620 mA; Channel Spacing = 5 MHz;
80
80
P
P
L(AV)
L(AV)
All information provided in this document is subject to legal disclaimers.
001aan069
001aan071
(W)
(W)
(1)
(2)
(3)
BLF7G22L-200; BLF7G22LS-200
120
120
50
40
30
20
10
0
Rev. 3 — 1 April 2011
(%)
η
D
Fig 8.
Fig 10. Adjacent power channel ratio (5 MHZ) as
ACPR
(dBc)
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
19.0
18.6
18.2
17.8
17.4
17.0
−20
−30
−40
−50
p
5M
0
0
V
PAR = 8.4 dB at 0.01 % probability on the CCDF.
Power gain as a function of average load
power; typical values
V
PAR = 8.4 dB at 0.01 % probability on the CCDF.
function of average load power; typical values
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
40
40
= 1620 mA; Channel Spacing = 5 MHz;
= 1620 mA; Channel Spacing = 5 MHz;
(1)
(2)
(3)
Power LDMOS transistor
80
80
P
P
L(AV)
L(AV)
© NXP B.V. 2011. All rights reserved.
001aan070
001aan072
(1)
(2)
(3)
(W)
(W)
120
120
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