NTD4965N-1G ON Semiconductor, NTD4965N-1G Datasheet - Page 2
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NTD4965N-1G
Manufacturer Part Number
NTD4965N-1G
Description
MOSFET N-CH 30V 68A IPAK-4
Manufacturer
ON Semiconductor
Datasheet
1.NTD4965N-1G.pdf
(7 pages)
Specifications of NTD4965N-1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
17.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
1710pF @ 15V
Power - Max
1.39W
Mounting Type
Through Hole
Package / Case
TO-251-3 Long Leads, IPak, TO-251AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.7 mOhms
Forward Transconductance Gfs (max / Min)
52 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
17.8 A
Power Dissipation
1.39 W, 2.6 W, 38.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Gate Charge Qg
17.2 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD4965N-1G
Manufacturer:
ON
Quantity:
12 500
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
G(TOT)
d(ON)
GS(TH)
C
G(TOT)
Q
Q
GSS
DS(on)
DSS
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
/
http://onsemi.com
J
V
V
V
GS
GS
GS
V
V
V
V
= 0 V, f = 1.0 MHz, V
V
= 4.5 V, V
= 10 V, V
V
2
DS
GS
V
GS
V
GS
GS
V
I
DS
D
GS
GS
DS
= 24 V
= 4.5 V
= 15 A, R
= 0 V,
= 10 V
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
DS
DS
DS
, I
= 15 V, I
D
GS
= 15 V, I
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 30 A
= 15 V,
T
T
I
I
J
I
I
D
D
J
D
D
DS
D
= 125°C
D
= 25°C
= 15 A
= 15 A
= 30 A
= 30 A
= 30 A
= 30 A
= 15 V
R
Symbol
qJC−TAB
R
R
R
qJC
qJA
qJA
Min
30
1.5
21.5
1710
28.2
12.1
34.2
18.9
14.2
Typ
17.2
3.4
5.3
664
340
1.8
4.1
3.4
5.4
2.7
5.1
8.5
52
Value
107.6
57.6
3.9
4.3
±100
Max
1.0
10
2.5
4.7
10
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mA
nA
nC
ns
nC
pF
V
V
S