NTMFS4926NT1G ON Semiconductor, NTMFS4926NT1G Datasheet - Page 5
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NTMFS4926NT1G
Manufacturer Part Number
NTMFS4926NT1G
Description
MOSFET N-CH 30V 44A SO-8FL
Manufacturer
ON Semiconductor
Datasheet
1.NTMFS4926NT1G.pdf
(7 pages)
Specifications of NTMFS4926NT1G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
1004pF @ 15V
Power - Max
920mW
Mounting Type
Surface Mount
Package / Case
8-TDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Forward Transconductance Gfs (max / Min)
17 s
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
44 A
Power Dissipation
0.92 W, 2.7 W, 6.13 W, 21.6 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
8.7 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTMFS4926NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1400
1200
1000
1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0
1
0.01
R
Thermal Limit
Package Limit
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
DS(on)
V
V
I
D
0 V < V
Single Pulse
T
GS
DD
C
= 15 A
V
V
= 25°C
= 10 V
= 15 V
5
DS
DS
Limit
Figure 7. Capacitance Variation
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
C
C
GS
C
0.1
oss
rss
iss
R
< 10 V
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
15
10
1
20
TYPICAL CHARACTERISTICS
10
T
V
J
GS
= 25°C
25
= 0 V
http://onsemi.com
100 ms
t
t
t
10 ms
1 ms
10 ms
dc
t
d(off)
r
d(on)
f
100
100
30
5
10
30
25
20
15
10
22
20
18
16
14
12
10
11
9
8
7
6
5
4
3
2
1
0
5
0
8
6
4
2
0
0
0.4
25
Figure 10. Diode Forward Voltage vs. Current
Qgs
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
V
T
2
J
GS
, STARTING JUNCTION TEMPERATURE (°C)
V
0.5
= 0 V
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
T
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
4
J
Qgd
= 125°C
0.6
6
75
QT
8
0.7
10
100
0.8
12
T
J
= 25°C
14
V
V
I
D
125
T
GS
DD
I
J
= 30 A
D
0.9
= 25°C
= 21 A
= 10 V
= 15 V
16
150
1.0
18