NTTFS5116PLTAG ON Semiconductor, NTTFS5116PLTAG Datasheet - Page 2

• Manufacturer Part Number: NTTFS5116PLTAG
• Description: MOSFET PWR P-CH 60V 20A 8-WDFN
• Manufacturer: ON Semiconductor

Specifications of NTTFS5116PLTAG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1258pF @ 30V
• Power - Max: 3.2W
• Mounting Type: Surface Mount
• Package / Case: 8-WSDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 72 mOhms
• Forward Transconductance Gfs (max / Min): 11 s
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 20 A
• Power Dissipation: 1.6 W, 3.2 W, 20 W, 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 25 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
V
V
(T
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
(BR)DSS
J
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
C
V
V
C
g
d(on)
d(off)
DSS
GSS
G(TH)
R
t
= 25°C unless otherwise specified)
RR
t
t
FS
oss
GP
t
t
SD
rss
GS
GD
RR
iss
a
b
G
r
f
/T
/T
J
J
V
V
V
V
GS
GS
GS
GS
http://onsemi.com
V
V
V
= −4.5 V, V
= −4.5 V, V
V
= 0 V, f = 1.0 MHz, V
= −10 V, V
GS
V
V
V
GS
V
GS
V
V
GS
DS
I
V
GS
GS
GS
S
GS
DS
= 0 V, d
DS
I
D
= −4.5 V, V
= −5 A
= −4.5 V
= −60 V
= −10 V
Test Condition
= V
= 0 V,
= 0 V,
= 0 V, I
= 0 V, V
= −5 A, R
= −15 V, I
2
I
DS
S
DS
DS
DS
IS
= −5 A
, I
/d
D
D
= −48 V, I
= −48 V, I
= −48 V, I
GS
t
= −250 mA
DS
= −250 mA
G
= −100 A/ms,
D
= ±20 V
= 6 W
= −6 A
= −48 V,
T
I
DS
T
T
T
D
I
J
J
D
J
J
D
= −4.4 A
= 125°C
D
D
= 125°C
= −30 V
= 25°C
= −6 A
= 25°C
= −5 A
= −5 A
= −5 A
Min
−60
−1
−0.79
−0.64
1258
69.7
−6.2
Typ
127
3.1
5.3
37
51
11
84
25
14
15
58
30
37
20
15
19
1
4
7
5
−100
±100
Max
−1.0
−1.2
−3
52
72
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
nC
ns
ns
W
V
V
S
V
V