NTTFS5826NLTAG ON Semiconductor, NTTFS5826NLTAG Datasheet

NTTFS5826NLTAG

Manufacturer Part Number

NTTFS5826NLTAG

Description

MOSFET PWR N-CH 60V 20A 8-WDFN

Manufacturer

ON Semiconductor

Datasheet

1.NTTFS5826NLTWG.pdf (6 pages)

Specifications of NTTFS5826NLTAG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

24 mOhm @ 7.5A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

8.4nC @ 4.5V

Input Capacitance (ciss) @ Vds

850pF @ 25V

Power - Max

3.1W

Mounting Type

Surface Mount

Package / Case

8-WSDFN Exposed Pad

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

24 mOhms

Forward Transconductance Gfs (max / Min)

8 s

Drain-source Breakdown Voltage

60 V

Continuous Drain Current

20 A

Power Dissipation

1.6 W, 3.1 W, 10 W, 19 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Gate Charge Qg

8.4 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTTFS5826NLTAG

Manufacturer:

ON Semiconductor

Quantity:

3 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTTFS5826NLTAG

Manufacturer:

Quantity:

20 000

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NTTFS5826NL

Power MOSFET

60 V, 24 mW, Single N−Channel, m8FL

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The entire application environment impacts the thermal resistance values shown,

2. Psi (Y) is used as required per JESD51−12 for packages in which

3. Surface−mounted on FR4 board using a 650 mm

MAXIMUM RATINGS

October, 2010 − Rev. 0

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Notes 1, 2, and 3)

Power Dissipation

and 3)

Continuous Drain

Current R

& 3)

Power Dissipation

Pulsed Drain Current

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

L(pk)

Junction−to−Mounting Board (top) − Steady

Junction−to−Ambient − Steady State (Note 3)

Small Footprint (3.3 x 3.3 mm) for Compact Designs

Low Q

Low Capacitance to Minimize Driver Losses

These are Pb−Free Devices

Motor Drivers

DC−DC Converters

Synchronous Rectification

Power Management

YJ−mb

qJA

they are not constants and are only valid for the particular conditions noted.

substantially less than 100% of the heat flows to single case surface.

State (Notes 2, 3)

(Notes 1 & 3)

= 14.4 A, L = 1.0 mH, R

(Notes 1, 2,

G(TOT)

YJ−mb

qJA

= 25°C, V

(Notes 1

to Minimize Switching Losses

Parameter

= 50 V, V

Steady

State

= 25°C unless otherwise noted)

= 25°C, t

= 25 W)

= 10 V,

= 100°C

= 25°C

= 100°C

= 10 ms

= 25°C

Symbol

YJ−mb

, 2 oz. Cu pad.

, T

DSS

qJA

stg

Value

−55 to

Value

"20

7.9

133

175

260

3.1

1.6

°C/W

Unit

°C

†For information on tape and reel specifications,

NTTFS5826NLTAG

NTTFS5826NLTWG WDFN8

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

CASE 511AB

(BR)DSS

60 V

(Note: Microdot may be in either location)

Device

WDFN8

(m8FL)

ORDERING INFORMATION

5826

http://onsemi.com

32 mW @ 4.5 V

24 mW @ 10 V

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−Channel

DS(on)

(Pb−Free)

Package

WDFN8

MARKING DIAGRAM

Publication Order Number:

MAX

AYWWG

1500/Tape & Reel

5000/Tape & Reel

5826

NTTFS5826NL/D

Shipping

20 A

MAX

†

Related parts for NTTFS5826NLTAG

NTTFS5826NLTAG Summary of contents

Page 1

... A S (Note: Microdot may be in either location 260 °C L Device NTTFS5826NLTAG NTTFS5826NLTWG WDFN8 †For information on tape and reel specifications, Symbol Value Unit including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification R 7.9 °C/W YJ−mb Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V Drain−to−Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature V Coefficient Drain−to−Source On Resistance Forward ...

Page 3

...

Page 4

C iss 800 600 400 200 C C oss rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 100 4.5 ...

Page 5

0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response ...

Page 6

... M 0.57 0.75 0.47 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...

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