NTNUS3171PZT5G ON Semiconductor, NTNUS3171PZT5G Datasheet - Page 3

• Manufacturer Part Number: NTNUS3171PZT5G
• Description: MOSFET P-CH 20V 200MA SOT-1123
• Manufacturer: ON Semiconductor

Specifications of NTNUS3171PZT5G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 13pF @ 15V
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SOT-1123
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 7 mOhms
• Forward Transconductance Gfs (max / Min): 0.26 s
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 150 A
• Power Dissipation: - 125 mW, - 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Details

0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
1.75
1.50
1.25
1.00
0.75
0.50
0
1
0
−50
Figure 3. On−Resistance vs. Gate Voltage
I
V
D
Figure 5. On−Resistance Variation with
4.5 V
GS
Figure 1. On−Region Characteristics
= 200 mA
I
−25
V
D
V
DS
= 4.5 V
GS
= 20 mA
1
, DRAIN−TO−SOURCE VOLTAGE (V)
I
, GATE−TO−SOURCE VOLTAGE (V)
D
T
2
J
= 200 mA
, JUNCTION TEMPERATURE (°C)
0
Temperature
V
2
25
GS
= 2.2 thru 2.5 V
3
50
3
2.0 V
75
TYPICAL CHARACTERISTICS
4
100
T
T
4
J
J
= 25°C
= 25°C
http://onsemi.com
1.8 V
1.6 V
1.4 V
1.2 V
1.0 V
125
5
5
150
3
10,000
1000
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
100
3.5
2.5
1.5
10
0
3
2
0.10
0
0
Figure 4. On−Resistance vs. Drain Current and
V
V
T
Figure 6. Drain−to−Source Leakage Current
DS
GS
J
T
= 25°C
J
≥ 5 V
= 0 V
= 25°C
V
0.5
V
Figure 2. Transfer Characteristics
DS
T
GS
0.15
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 125°C
, GATE−TO−SOURCE VOLTAGE (V)
5
I
D
, DRAIN CURRENT (A)
1
0.20
Gate Voltage
T
vs. Voltage
V
V
J
GS
GS
= −55°C
T
T
J
J
1.5
= 4.5 V
10
= 2.5 V
= 150°C
= 125°C
0.25
2
15
0.30
2.5
0.35
20
3