IXTH16N50D2 IXYS, IXTH16N50D2 Datasheet

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IXTH16N50D2

Manufacturer Part Number
IXTH16N50D2
Description
MOSFET N-CH 500V 16A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH16N50D2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
240 mOhm @ 8A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
16A
Gate Charge (qg) @ Vgs
199nC @ 5V
Input Capacitance (ciss) @ Vds
5250pF @ 25V
Power - Max
695W
Mounting Type
Through Hole
Package / Case
TO-247-3
Vds, Max, (v)
500
Id(on), Min, (a)
16
Rds(on), Max, (?)
0.24
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
5250
Crss, Typ, (pf)
130
Qg, Typ, (nc)
199
Pd, (w)
695
Rthjc, Max, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Depletion Mode
MOSFET
N-Channel
Symbol
V
V
V
V
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
I
© 2010 IXYS CORPORATION, All Rights Reserved
GSX
DSX(off)
D(on)
J
JM
stg
L
SOLD
DSX
DGX
GSX
GSM
D
GS(off)
DS(on)
d
J
DSX
= 25°C, Unless Otherwise Specified)
TO-268
TO-247
Test Conditions
T
T
Continuous
Transient
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
V
V
V
V
V
V
Test Conditions
J
J
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= - 5V, I
= 25V, I
= ±20V, V
= V
= 0V, I
= 0V, V
DSX
D
, V
DS
D
D
= 8A, Note 1
= 1mA
= 250µA
GS
= 25V, Note 1
DS
= - 5V
= 0V
GS
= 1MΩ
Advance Technical Information
T
J
= 125°C
IXTH16N50D2
IXTT16N50D2
- 2.0
Characteristic Values
Min.
500
- 55 ... +150
- 55 ... +150
16
Maximum Ratings
1.13 / 10
500
500
±20
±30
695
150
300
260
Typ.
6
4
Max.
±100 nA
- 4.0
Nm/lb.in.
150 µA
240 mΩ
10 µA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
g
g
V
I
R
TO-247 (IXTH)
TO-268 (IXTT)
G = Gate
S = Source
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
D(on)
Flammability Classification
DS(on)
DSX
G
D
≤ ≤ ≤ ≤ ≤
=
>
S
G
D
Tab = Drain
S
240mΩ Ω Ω Ω Ω
500V
16A
D (Tab)
D (Tab)
= Drain
DS100261(4/10)

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IXTH16N50D2 Summary of contents

Page 1

... GSX DSX(off) DS DSX 0V 8A, Note 1 DS(on 0V 25V, Note 1 D(on © 2010 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTH16N50D2 IXTT16N50D2 Maximum Ratings 500 = 1MΩ 500 GS ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 300 260 1. Characteristic Values Min. Typ. 500 - 2 125° ...

Page 2

... Characteristic Values Min. Typ. = 75° 250 C Characteristic Values Min. Typ. 0.8 695 20 7 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH16N50D2 IXTT16N50D2 TO-247 (IXTH) Outline Max Terminals Gate 3 - Source nC Dim. Millimeter nC Min 4.7 A 2.2 1 0.18 ° ...

Page 3

... Fig. 2. Extended Output Characteristics @ Volts DS Fig. 4. Drain Current @ 0.4V - 0. 2. Volts DS Fig. 6. Dynamic Resistance vs. Gate Voltage T = 25º 100º Volts GS IXTH16N50D2 IXTT16N50D2 = 25º 1. 0.5V - 25º ∆ 50V - 25V ...

Page 4

... Drain Current 4 3 3.0 2 125ºC J 2.0 1.5 1 25ºC 0 Amperes D Fig. 10. Transconductance 30V 40ºC, 25ºC, 125º Amperes D Fig. 12. Forward Voltage Drop of Intrinsic Diode -10V 125º 0.3 0.4 0.5 0 Volts SD IXTH16N50D2 IXTT16N50D2 = 8A Value 25ºC J 0.7 0.8 0.9 ...

Page 5

... Fig. 17. Maximum Transient Thermal Impedance Single Pulse 0.1 1,000 10 Fig. 17. Maximum Transient Thermal Impedance hvjv 0.001 0.01 Pulse Width - Seconds IXTH16N50D2 IXTT16N50D2 Fig. 14. Gate Charge V = 250V 10mA 100 120 140 Q - NanoCoulombs G Fig. 16. Forward-Bias Safe Operating Area @ T = 75º ...

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