IXTH16N20D2 IXYS, IXTH16N20D2 Datasheet - Page 3

• Manufacturer Part Number: IXTH16N20D2
• Description: MOSFET N-CH 200V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N20D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 73 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 208nC @ 5V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 200
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.073
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 5500
• Crss, Typ, (pf): 607
• Qg, Typ, (nc): 208
• Pd, (w): 695
• Rthjc, Max, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
16
14
12
10
16
14
12
10
40
36
32
28
24
20
16
12
8
4
0
8
6
4
2
0
8
6
4
2
0
0
0
0
0.1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.2
10
Fig. 5. Drain Current @ T
0.2
0.4
20
V
0.3
DS
V
V
V
V
V
DS
DS
GS
- Volts
GS
GS
- 0.4V
- 0.8V
0.6
- 2.0V
- 2.4V
- 1.2V
- 1.6V
- Volts
- Volts
= 5V
= 0V
= 5V
3V
2V
1V
2V
4V
3V
4V
0.4
30
-1V
-2V
-3V
0V
0.8
J
= 100ºC
0.5
J
J
- 3V
= 125ºC
= 25ºC
-1V
-2V
1V
0V
40
1
0.6
0.7
1.2
50
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
1.E+02
1.E+01
200
180
160
140
120
100
80
60
40
20
36
32
28
24
20
16
12
0
8
4
0
0
-5
0
Fig. 2. Extended Output Characteristics @ T
T
J
Fig. 6. Dynamic Resistance vs. Gate Voltage
= 100ºC
5
10
-4
Fig. 4. Drain Current @ T
10
T
J
= 25ºC
20
-3
V
DS
15
V
V
V
GS
V
DS
GS
- Volts
GS
= 5V
- 0.4V
- 0.8V
- 1.2V
- 1.6V
- 2.0V
- 2.4V
- Volts
- Volts
= 0V
1.5V
20
30
-2
1V
IXTH16N20D2
IXTT16N20D2
J
2V
= 25ºC
25
∆
V
DS
1V
40
-1
= 50V - 25V
J
= 25ºC
0V
30
- 1V
-2V
50
35
0