IXTH16N10D2 IXYS, IXTH16N10D2 Datasheet - Page 5

• Manufacturer Part Number: IXTH16N10D2
• Description: MOSFET N-CH 100V 16A TO-247
• Manufacturer: IXYS

Specifications of IXTH16N10D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 64 mOhm @ 8A, 0V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Gate Charge (qg) @ Vgs: 225nC @ 5V
• Input Capacitance (ciss) @ Vds: 5700pF @ 25V
• Power - Max: 695W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vds, Max, (v): 100
• Id(on), Min, (a): 16
• Rds(on), Max, (?): 0.064
• Vgs(off), Max, (v): -4.0
• Ciss, Typ, (pf): 5700
• Crss, Typ, (pf): 940
• Qg, Typ, (nc): 225
• Pd, (w): 695
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2010 IXYS CORPORATION, All Rights Reserved
100,000
10,000
1,000
1,000
100
0.300
1.000
0.100
0.010
0.001
10
100
1
0.00001
1
0
T
T
Single Pulse
J
C
f
= 150ºC
= 25ºC
= 1 MHz
Fig. 15. Forward-Bias Safe Operating Area
R
5
DS(on)
Limit
10
Fig. 13. Capacitance
0.0001
@ T
15
V
DS
V
C
- Volts
10
DS
= 25ºC
20
- Volts
25
Fig. 17. Maximum Transient Thermal Impedance
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C rss
C iss
C oss
35
DC
100
25µs
100µs
1ms
10ms
100ms
Pulse Width - Seconds
40
hvjv
0.01
1,000
100
10
-1
-2
-3
-4
-5
5
4
3
2
1
0
1
0
1
T
T
Single Pulse
V
I
I
20
J
C
D
G
DS
= 150ºC
= 8A
= 10mA
= 75ºC
Fig. 16. Forward-Bias Safe Operating Area
= 50V
R
DS(on)
40
Limit
60
0.1
80
Fig. 14. Gate Charge
Q
@ T
G
V
100
DS
- NanoCoulombs
C
- Volts
10
= 75ºC
120
140
IXTH16N10D2
1
IXTT16N10D2
160
180
IXYS REF: T_16N10D2(8C)4-08-10
200
DC
220
100
25µs
100µs
1ms
10ms
100ms
240
10