IRFHS9301TRPBF International Rectifier, IRFHS9301TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFHS9301TRPBF
• Description: MOSFET P-CH 30V 6A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS9301TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 580pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 65 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 13 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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‚
100
+
Fig 12. On-Resistance vs. Gate Voltage
-
80
60
40
20
0
D.U.T
T J = 25°C
-V GS, Gate -to -Source Voltage (V)
Fig 15.
*
5
ƒ
+
-
•
•
•
•
SD
•
•
•
10
T J = 125°C
600
500
400
300
200
100
-
0
G
„
1E-5
I D = -7.8A
Fig 14. Typical Power vs. Time
15
+
1E-4
+
-
20
1E-3
Time (sec)
Re-Applied
Voltage
Reverse
Recovery
Current
1E-2
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
100
P.W.
SD
80
60
40
20
DS
1E-1
Waveform
Waveform
0
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
1E+0
5
Diode Recovery
Current
-I D , Drain Current (A)
dv/dt
Forward Drop
10
di/dt
®
Power MOSFETs
Vgs = -4.5V
15
D =
Period
Vgs = -10V
P.W.
20
V
V
I
SD
GS
DD
25
=10V
30
5