IRFHS8342TRPBF International Rectifier, IRFHS8342TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFHS8342TRPBF
• Description: MOSFET N-CH 30V 8.8A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8342TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 25 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFHS8342PbF

‚
ƒ
„
…
Thermal Resistance
R
R
R
R
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
GS(th)
SD
θJC
θJC
θJA
θJA
DS(on)
g
g
gs
gd
G
iss
oss
rss
rr
R
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
2
GS(th)
DSS
θ
DSS
(Bottom)
(Top)
is measured at
/ΔT
J
J
= 25°C (unless otherwise specified)
T
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (<10s)
of approximately 90°C.
Parameter
™
Parameter
f
Parameter
f
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
18
Typ. Max. Units
Typ. Max. Units
-5.8
–––
–––
–––
–––
–––
–––
–––
–––
600
100
–––
1.8
4.2
8.7
1.5
1.3
1.9
5.9
5.2
5.0
22
13
20
15
46
11
13
8.5
2.35
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.0
16
25
76
17
20
d
mV/°C
mV/°C
mΩ
nC
nC
nC
μA
nA
ns
pF
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Fig.17
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 330 A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DD
GS
DS
G
= 8.5A
= 8.5A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 10V, I
= 15V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V, V
= 10V
= 15V, V
= 0V
GS
d
d
, I
D
(See Fig. 6 & 16)
D
S
F
D
D
= 250μA
D
GS
GS
GS
= 25μA
Max.
= 8.5A
= 8.5A
DS
= 8.5A
= 8.5A
Conditions
Conditions
= 6.8A
13
90
60
42
= 0V
= 0V, T
= 4.5V
= 15V, I
e
d
d
D
d
ed
e
= 1mA
, V
, V
e
J
D
= 125°C
www.irf.com
GS
DD
= 8.5A
= 13V
= 0V
G
Units
°C/W
d
e
D
S