IRFHS8242TRPBF International Rectifier, IRFHS8242TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFHS8242TRPBF
• Description: MOSFET N-CH 25V 9.9A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHS8242TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 9.9A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 10.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 653pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 21 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 4.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFHS8242PbF

‚
ƒ
„
…
…
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
I
I
V
t
Q
t
Thermal Resistance
R
R
R
R
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
GS(th)
SD
DS(on)
G
iss
oss
rss
θJC
θJC
θJA
θJA
g
g
gs
gd
rr
R
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
For DESIGN AID ONLY, not subject to production testing.
2
GS(th)
DSS
θ
DSS
(Bottom)
(Top)
is measured at
/∆T
J
J
= 25°C (unless otherwise specified)
T
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
of approximately 90°C.
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (<10s)
Parameter
Ù
Parameter
f
Parameter
f
Time is dominated by parasitic Inductance
Min.
Min.
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25
19
Typ. Max. Units
Typ. Max. Units
10.0
17.0
10.4
–––
-6.8
–––
–––
–––
–––
653
171
–––
–––
–––
–––
1.9
6.5
5.4
5.3
1.8
4.3
1.8
1.6
18
19
78
11
11
8.5
-100
13.0
21.0
2.35
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
1.0
84
17
17
d
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Fig.17
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 280 A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
GS
DS
GS
DD
G
GS
DS
= 8.5A
= 8.5A
=1.8Ω
= 25°C, I
= 25°C, I
= V
= 20V, V
= 20V, V
= 10V, I
= 13V
= 10V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V, V
= 10V
= 13V, V
= 0V
GS
d
d
, I
D
(See Fig. 6 & 16)
D
S
F
D
D
= 250µA
D
GS
GS
GS
= 25µA
DS
= 8.5A
= 8.5A
= 8.5A
Max.
= 8.5A
Conditions
Conditions
= 6.8A
13
90
60
42
= 0V
= 0V, T
= 4.5V
= 13V, I
eÃ
d
D
d
d
ed
e
= 1mA
, V
, V
e
J
D
= 125°C
www.irf.com
DD
GS
= 8.5A
= 13V
= 0V
G
Units
°C/W
d
e
D
S