DMN3005LK3-13 Diodes Inc, DMN3005LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMN3005LK3-13
• Description: MOSFET N-CH 30V 14.5A TO252-3L
• Manufacturer: Diodes Inc

Specifications of DMN3005LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 46.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4342pF @ 15V
• Power - Max: 1.68W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3005LK3-13DITR

DMN3005LK3
Document number: DS33318 Rev. 2 - 2
1,000,000
100,000
10,000
1,000
20
18
16
14
12
10
100
8
6
4
2
0
0.2
10
1
Fig. 9 Typical Drain-Source Leakage Current vs Voltage
0
Fig. 7 Diode Forward Voltage vs. Current
0.001
V , SOURCE-DRAIN VOLTAGE (V)
0.01
0.1
SD
0.4
0.00001
V , DRAIN-SOURCE VOLTAGE (V)
5
1
DS
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
10
T = 25°C
0.6
A
0.0001
T = 125°C
T = 150°C
T = 85°C
T = 25°C
A
15
A
A
A
0.8
0.001
20
1.0
25
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
0.01
1.2
1
30
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D = 0.9
4 of 6
0.1
10,000
1,000
100
1
0
V , DRAIN-SOURCE VOLTAGE (V)
5
DS
P(pk)
Duty Cycle, D = t /t
T - T = P * R
10
R
Fig. 8 Typical Capacitance
J
θ JA
R
θ
JA
t
(t) = r(t) *
A
10
1
t
2
= 76°C/W
θ
R
JA
100
1 2
15
θ
JA
(t)
C
C
C
20
oss
rss
iss
DMN3005LK3
1,000
f = 1MHz
25
© Diodes Incorporated
October 2010
30