DMG8880LK3-13 Diodes Inc, DMG8880LK3-13 Datasheet - Page 2

• Manufacturer Part Number: DMG8880LK3-13
• Description: MOSFET N-CH 30V 11A TO252-3L
• Manufacturer: Diodes Inc

Specifications of DMG8880LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 11.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 27.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1289pF @ 15V
• Power - Max: 1.68W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG8880LK3-13DITR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Continuous Drain Current (Note 5) V
Pulsed Drain Current (Note 6)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG8880LK3
Document number: DS32052 Rev. 3 - 2
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided.
6.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Repetitive rating, pulse width limited by junction temperature and current limited by package.
Characteristic
@T
A
= 25°C unless otherwise specified
J
= 25°C
GS
GS
Characteristic
Characteristic
= 10V
= 10V
@T
A
A
A
= 25°C unless otherwise specified
= 25°C (Note 4)
= 25°C (Note 5)
Steady
Steady
State
State
Symbol
R
BV
V
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DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
R
oss
t
t
SD
rss
DSS
iss
fs
gs
gd
r
f
g
g
g
|
2 of 6
Min
1.0
30
T
T
T
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
A
A
A
= 25°C
= 85°C
= 25°C
= 85°C
17.52
36.13
19.67
1289
0.97
27.6
14.4
7.04
Typ
187
162
1.5
7.0
9.6
0.7
3.6
4.9
22
-
-
-
±100
Max
1.0
2.0
9.3
1.0
14
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Symbol
J
R
R
V
V
,
P
P
I
T
GSS
θJA
θJA
DSS
I
I
DM
D
D
D
D
STG
Unit
mΩ
nC
nC
nC
nC
μA
nA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
-55 to +150
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
I
V
I
V
R
R
D
D
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
GS
GS
DD
G
L
= 11.6A, Ig = 1.0mA
= 11.6A
Value
Value
= 1.3Ω
1.68
74.3
30.8
16.5
= 11Ω, I
±20
4.1
= 0V, I
= 30V, V
= ±20V, V
= V
= 10V, I
= 4.5V, I
= 15V, I
= 0V, I
= 15V, V
= 0V, V
= 10V, V
= 5V, V
= 15V, V
30
11
12
48
8
GS
Test Condition
DMG8880LK3
, I
D
SD
D
GS
DS
D
D
D
= 250μA
D
GS
GS
DS
GS
= 11.6A,
= 250μA
= 15A
= 2.1A
= 11.6A
DS
= 10.7A
= 0V, f = 1MHz
= 15V,
= 0V
= 0V,
= 15V,
= 10V,
© Diodes Incorporated
= 0V
October 2010
°C/W
°C/W
Unit
Unit
°C
W
W
V
V
A
A
A