DMN3730UFB-7 Diodes Zetex, DMN3730UFB-7 Datasheet - Page 4

• Manufacturer Part Number: DMN3730UFB-7
• Description: MOSFET N-CH 30V 750MA DFN
• Manufacturer: Diodes Zetex

Specifications of DMN3730UFB-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 64.3pF @ 25V
• Power - Max: 470mW
• Mounting Type: Surface Mount
• Package / Case: 3-UFDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3730UFB-7CT

DMN3730UFB
Document number: DS35018 Rev. 3 - 2
1.2
1.0
0.8
0.6
0.4
0.2
100
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
0
8
6
4
2
0
1
-50 -25
0
0
T , AMBIENT TEMPERATURE (°C)
0.5
Fig. 11 Gate-Charge Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
C
5
A
Q , TOTAL GATE CHARGE (nC)
DS
rss
Fig. 9 Typical Total Capacitance
g
0
C
oss
C
10
1
iss
25
V
DS
50
I = 1A
1.5
15
D
I = 250µA
D
= 15V
75
20
2
I = 1mA
D
100
f = 1MHz
2.5
25
125 150
30
3
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10,000
1,000
2.0
1.6
1.2
0.8
0.4
100
10
0
1
0
0
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
0.2
SD
V , DRAIN-SOURCE VOLTAGE (V)
Diodes Incorporated
5
DS
Fig. 10 Typical Leakage Current
A Product Line of
vs. Drain-Source Voltage
0.4
10
0.6
15
T = 25°C
A
T = 150°C
T = 125°C
T = 85°C
A
A
0.8
T = 25°C
A
A
20
DMN3730UFB
1
25
© Diodes Incorporated
March 2011
1.2
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