DMN3730UFB4-7 Diodes Zetex, DMN3730UFB4-7 Datasheet - Page 5

• Manufacturer Part Number: DMN3730UFB4-7
• Description: MOSFET N-CH 30V 750MA DFN
• Manufacturer: Diodes Zetex

Specifications of DMN3730UFB4-7

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 750mA
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 1.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 64.3pF @ 25V
• Power - Max: 470mW
• Mounting Type: Surface Mount
• Package / Case: 3-XFDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN3730UFB4-7TR

Package Outline Dimensions
Suggested Pad Layout
DMN3730UFB4
Document number: DS35017 Rev. 4 - 2
0.001
0.01
A
0.1
0.00001
E
1
D = 0.01
D = 0.1
D = 0.02
D = Single Pulse
D = 0.7
D = 0.05
b2
D = 0.5
D = 0.3
A1
X
L2
X
0.0001
1
G2
D = 0.005
Y
D
L3
0.001
Z
C
G1
L1
Fig. 12 Transient Thermal Response
t , PULSE DURATION TIME (s)
0.01
1
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D = 0.9
5 of 6
b1
0.1
e
Dimensions
G1
G2
X1
Z
X
Y
C
1
Dim
A1
b1
b2
L1
L2
L3
A
D
E
e
All Dimensions in mm
Value (in mm)
DFN1006H4-3
0.10
0.45
0.95
0.55
0.20
0.20
Min
⎯
⎯
⎯
10
0
P(pk)
0.25
Duty Cycle, D = t /t
T - T = P * R
1.1
0.3
0.2
0.7
0.4
0.7
R
J
θJA
R
1.075
0.675
θ
Max
0.40
0.05
0.20
0.55
0.30
0.30
JA
t
⎯
⎯
(t) = r(t) *
A
1
t
= 253°C/W
2
100
0.02
0.15
0.50
1.00
0.60
0.35
0.25
0.25
0.40
Typ
θ
R
JA
⎯
1 2
θ
JA
(t)
DMN3730UFB4
1,000
© Diodes Incorporated
March 2011