NTMD4N03R2G ON Semiconductor, NTMD4N03R2G Datasheet - Page 2

• Manufacturer Part Number: NTMD4N03R2G
• Description: MOSFET PWR N-CH DL 4A 30V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD4N03R2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 20V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.048 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTMD4N03R2GOS; NTMD4N03R2GOS; NTMD4N03R2GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 2 & 3)
BODY−DRAIN DIODE RATINGS (Note 2)
Drain−to−Source Breakdown Voltage
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I
(V
(V
(V
(V
(V
(V
(V
(V
S
GS
DS
DS
GS
DS
GS
GS
DS
= 2 A, dI
= 0 Vdc, I
= 30 Vdc, V
= 30 Vdc, V
= ±20 Vdc, V
= V
= 10 Vdc, I
= 4.5 Vdc, I
= 3 Vdc, I
GS
S
, I
/dt = 100 A/ms, V
D
D
D
= 250 mAdc)
D
D
= 2 Adc)
= 250 mA)
GS
GS
= 4 Adc)
DS
= 2 Adc)
= 0 Vdc, T
= 0 Vdc, T
= 0 Vdc)
Characteristic
GS
J
J
= 25°C)
= 125°C)
= 0 V)
(T
(I
S
C
(V
= 2 Adc, V
= 25°C unless otherwise noted)
DS
(V
(I
S
(I
DD
= 20 Vdc, V
dI
S
= 2 Adc, V
(V
V
S
= 2 A, V
= 20 Vdc, I
f = 1.0 MHz)
V
GS
/dt = 100 A/ms)
DS
I
R
D
GS
GS
G
= 3.5 A)
= 10 Vdc,
= 10 Vdc,
= 2 W)
= 10 V,
http://onsemi.com
= 0 V, T
GS
GS
GS
D
= 0 V,
= 0 V)
= 0 Vdc,
= 2 A,
J
= 150°C)
2
V
Symbol
R
V
(BR)DSS
I
I
C
t
t
DS(on)
C
Q
GS(th)
C
V
g
DSS
GSS
d(on)
d(off)
Q
Q
Q
t
FS
oss
t
t
rss
t
t
SD
iss
RR
rr
a
b
r
f
T
1
2
Min
1.0
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.048
0.065
0.008
Typ
0.82
0.63
285
1.9
4.2
6.0
32
95
35
7.0
8.0
1.1
1.9
4.0
14
16
10
14
10
−
−
−
−
0.060
0.080
Max
100
400
135
1.0
3.0
10
70
1.0
15
30
30
20
16
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
pF
nC
mC
W
ns
ns